Experimental staggered-source and N+ pocket-doped channel III-V tunnel field-effect transistors and their scalabilities

Dheeraj Mohata; Saurabh Mookerjea; Ashish Agrawal; Yuanyuan Li; Theresa Mayer; Vijaykrishnan Narayanan; Amy Liu; Dmitri Loubychev; Joel Fastenau; Suman Datta

doi:10.1143/APEX.4.024105

Experimental staggered-source and N+ pocket-doped channel III-V tunnel field-effect transistors and their scalabilities

Dheeraj Mohata
, Saurabh Mookerjea
, Ashish Agrawal
, Yuanyuan Li
, Theresa Mayer
, Vijaykrishnan Narayanan
, Amy Liu
, Dmitri Loubychev
, Joel Fastenau
, Suman Datta

Computer Science and Engineering

Research output: Contribution to journal › Article › peer-review

104 Scopus citations

Abstract

In this paper, we experimentally demonstrate 100% enhancement in drive current (I_ON) over In_0.53Ga_0.47As n-channel homojunction tunnel field-effect transistor (TFET) by replacing In _0.53Ga_0.47As source with a moderately staggered and lattice-matched GaAs_0.5Sb_0.5. The enhancement is also compared with In_0.53Ga_0.47As N+ pocket (δ)-doped channel homojunction TFET. Utilizing calibrated numerical simulations, we extract the effective scaling length (λ_eff) for the double gate, thin-body configuration of the staggered heterojunction and δ-doped channel TFETs. The extracted λ_eff is shown to be lower than the geometrical scaling length, particularly in the highly staggered-source heterojunction TFET due to the reduced channel side component of the tunnel junction width, resulting in improved device scalability.

Original language	English (US)
Article number	24105
Journal	Applied Physics Express
Volume	4
Issue number	2
DOIs	https://doi.org/10.1143/APEX.4.024105
State	Published - Feb 2011

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.1143/APEX.4.024105

Cite this

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title = "Experimental staggered-source and N+ pocket-doped channel III-V tunnel field-effect transistors and their scalabilities",

abstract = "In this paper, we experimentally demonstrate 100\% enhancement in drive current (ION) over In0.53Ga0.47As n-channel homojunction tunnel field-effect transistor (TFET) by replacing In 0.53Ga0.47As source with a moderately staggered and lattice-matched GaAs0.5Sb0.5. The enhancement is also compared with In0.53Ga0.47As N+ pocket (δ)-doped channel homojunction TFET. Utilizing calibrated numerical simulations, we extract the effective scaling length (λeff) for the double gate, thin-body configuration of the staggered heterojunction and δ-doped channel TFETs. The extracted λeff is shown to be lower than the geometrical scaling length, particularly in the highly staggered-source heterojunction TFET due to the reduced channel side component of the tunnel junction width, resulting in improved device scalability.",

author = "Dheeraj Mohata and Saurabh Mookerjea and Ashish Agrawal and Yuanyuan Li and Theresa Mayer and Vijaykrishnan Narayanan and Amy Liu and Dmitri Loubychev and Joel Fastenau and Suman Datta",

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doi = "10.1143/APEX.4.024105",

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T1 - Experimental staggered-source and N+ pocket-doped channel III-V tunnel field-effect transistors and their scalabilities

AU - Mohata, Dheeraj

AU - Mookerjea, Saurabh

AU - Agrawal, Ashish

AU - Li, Yuanyuan

AU - Mayer, Theresa

AU - Narayanan, Vijaykrishnan

AU - Liu, Amy

AU - Loubychev, Dmitri

AU - Fastenau, Joel

AU - Datta, Suman

PY - 2011/2

Y1 - 2011/2

N2 - In this paper, we experimentally demonstrate 100% enhancement in drive current (ION) over In0.53Ga0.47As n-channel homojunction tunnel field-effect transistor (TFET) by replacing In 0.53Ga0.47As source with a moderately staggered and lattice-matched GaAs0.5Sb0.5. The enhancement is also compared with In0.53Ga0.47As N+ pocket (δ)-doped channel homojunction TFET. Utilizing calibrated numerical simulations, we extract the effective scaling length (λeff) for the double gate, thin-body configuration of the staggered heterojunction and δ-doped channel TFETs. The extracted λeff is shown to be lower than the geometrical scaling length, particularly in the highly staggered-source heterojunction TFET due to the reduced channel side component of the tunnel junction width, resulting in improved device scalability.

AB - In this paper, we experimentally demonstrate 100% enhancement in drive current (ION) over In0.53Ga0.47As n-channel homojunction tunnel field-effect transistor (TFET) by replacing In 0.53Ga0.47As source with a moderately staggered and lattice-matched GaAs0.5Sb0.5. The enhancement is also compared with In0.53Ga0.47As N+ pocket (δ)-doped channel homojunction TFET. Utilizing calibrated numerical simulations, we extract the effective scaling length (λeff) for the double gate, thin-body configuration of the staggered heterojunction and δ-doped channel TFETs. The extracted λeff is shown to be lower than the geometrical scaling length, particularly in the highly staggered-source heterojunction TFET due to the reduced channel side component of the tunnel junction width, resulting in improved device scalability.

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JF - Applied Physics Express

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Experimental staggered-source and N+ pocket-doped channel III-V tunnel field-effect transistors and their scalabilities

Abstract

All Science Journal Classification (ASJC) codes

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