Exploiting data longevity for enhancing the lifetime of flash-based storage class memory

Wonil Choi, Mohammad Arjomand, Myoungsoo Jung, Mahmut T. Kandemir

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

This paper proposes to exploit the capability of retention time relaxation in flash memories for improving the lifetime of an SLCbased SSD. The main idea is that as a majority of I/O data in a typical workload do not need a retention time larger than a few days, we can have multiple partial program states in a cell and use every two states to store one-bit data at each time. Thus, we can store multiple bits in a cell (one bit at each time) without erasing it after each write -That would directly translates into lifetime enhancement. The proposed scheme is called Dense-SLC (D-SLC) flash design which improves SSD lifetime by 5.1×-8.6×.

Original languageEnglish (US)
Title of host publicationSIGMETRICS 2017 Abstracts - Proceedings of the 2017 ACM SIGMETRICS / International Conference on Measurement and Modeling of Computer Systems
PublisherAssociation for Computing Machinery, Inc
Pages53
Number of pages1
ISBN (Electronic)9781450350327
DOIs
StatePublished - Jun 5 2017
Event2017 ACM SIGMETRICS / International Conference on Measurement and Modeling of Computer Systems, SIGMETRICS 2017 - Urbana-Champaign, United States
Duration: Jun 5 2017Jun 9 2017

Publication series

NameSIGMETRICS 2017 Abstracts - Proceedings of the 2017 ACM SIGMETRICS / International Conference on Measurement and Modeling of Computer Systems

Other

Other2017 ACM SIGMETRICS / International Conference on Measurement and Modeling of Computer Systems, SIGMETRICS 2017
Country/TerritoryUnited States
CityUrbana-Champaign
Period6/5/176/9/17

All Science Journal Classification (ASJC) codes

  • Software
  • Hardware and Architecture
  • Computer Networks and Communications
  • Computational Theory and Mathematics

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