Exploration of device-circuit interactions in FinFET-based memories for sub-15nm technologies using a mixed mode quantum simulation framework: Atoms to systems

Sumeet Kumar Gupta; Sri Harsha Choday; Kaushik Roy

doi:10.1109/IEDM.2011.6131659

Exploration of device-circuit interactions in FinFET-based memories for sub-15nm technologies using a mixed mode quantum simulation framework: Atoms to systems

Sumeet Kumar Gupta
, Sri Harsha Choday
, Kaushik Roy

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Scopus citations

Abstract

We compare independent gate FinFETs, FinFETs with different fin orientations and asymmetric drain spacer extension FinFETs to analyze the implications of each for memory design in sub-15nm technologies. A mixed mode simulation framework based on ballistic NEGF models for FinFETs and circuit simulations in SPICE is developed for the analysis.

Original language	English (US)
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
DOIs	https://doi.org/10.1109/IEDM.2011.6131659
State	Published - Dec 1 2011
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: Dec 5 2011 → Dec 7 2011

Other

Other	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	12/5/11 → 12/7/11

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2011.6131659

Cite this

@inproceedings{f273d58bb5ef49b59bb46818900131d4,

title = "Exploration of device-circuit interactions in FinFET-based memories for sub-15nm technologies using a mixed mode quantum simulation framework: Atoms to systems",

abstract = "We compare independent gate FinFETs, FinFETs with different fin orientations and asymmetric drain spacer extension FinFETs to analyze the implications of each for memory design in sub-15nm technologies. A mixed mode simulation framework based on ballistic NEGF models for FinFETs and circuit simulations in SPICE is developed for the analysis.",

author = "Gupta, \{Sumeet Kumar\} and Choday, \{Sri Harsha\} and Kaushik Roy",

year = "2011",

month = dec,

day = "1",

doi = "10.1109/IEDM.2011.6131659",

language = "English (US)",

isbn = "9781457705052",

booktitle = "2011 International Electron Devices Meeting, IEDM 2011",

note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",

}

Gupta, SK, Choday, SH & Roy, K 2011, Exploration of device-circuit interactions in FinFET-based memories for sub-15nm technologies using a mixed mode quantum simulation framework: Atoms to systems. in 2011 International Electron Devices Meeting, IEDM 2011., 6131659, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 12/5/11. https://doi.org/10.1109/IEDM.2011.6131659

Exploration of device-circuit interactions in FinFET-based memories for sub-15nm technologies using a mixed mode quantum simulation framework: Atoms to systems. / Gupta, Sumeet Kumar; Choday, Sri Harsha; Roy, Kaushik.
2011 International Electron Devices Meeting, IEDM 2011. 2011. 6131659.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011

AU - Gupta, Sumeet Kumar

AU - Choday, Sri Harsha

AU - Roy, Kaushik

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We compare independent gate FinFETs, FinFETs with different fin orientations and asymmetric drain spacer extension FinFETs to analyze the implications of each for memory design in sub-15nm technologies. A mixed mode simulation framework based on ballistic NEGF models for FinFETs and circuit simulations in SPICE is developed for the analysis.

AB - We compare independent gate FinFETs, FinFETs with different fin orientations and asymmetric drain spacer extension FinFETs to analyze the implications of each for memory design in sub-15nm technologies. A mixed mode simulation framework based on ballistic NEGF models for FinFETs and circuit simulations in SPICE is developed for the analysis.

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UR - https://www.scopus.com/pages/publications/84863072771#tab=citedBy

U2 - 10.1109/IEDM.2011.6131659

DO - 10.1109/IEDM.2011.6131659

M3 - Conference contribution

AN - SCOPUS:84863072771

SN - 9781457705052

BT - 2011 International Electron Devices Meeting, IEDM 2011

Y2 - 5 December 2011 through 7 December 2011

ER -

Exploration of device-circuit interactions in FinFET-based memories for sub-15nm technologies using a mixed mode quantum simulation framework: Atoms to systems

Abstract

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All Science Journal Classification (ASJC) codes

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