TY - JOUR
T1 - Exploration of Low-Power High-SFDR Current-Steering D/A Converter Design Using Steep-Slope Heterojunction Tunnel FETs
AU - Kim, Moon Seok
AU - Li, Xueqing
AU - Liu, Huichu
AU - Sampson, John
AU - Datta, Suman
AU - Narayanan, Vijaykrishnan
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/6
Y1 - 2016/6
N2 - Steep-slope heterojunction tunnel field-effect transistor (HTFET) devices promise new opportunities beyond CMOS in low-power high-performance communication applications. In this paper, the circuit design optimization of a low-power 14-bit 1-GS/s current-steering digital-to-analog converter (DAC) using 0.4/0.3 V mixed-supply HTFETs is explored. Based on the device characteristics comparison and circuit analysis, it is shown in this paper that HTFET endorses significant differences in both I-V and C-V due to the steepslope tunneling mechanism and a nature of vertically fabricated structure. While such differences significantly affect the circuit design corners, this paper gives the device-circuit co-optimization for the HTFET DAC, reaching at higher current source output impedance, less nonlinear switching glitch distortions, and thus superior spectral performance over the Si-CMOS DAC. HTFET device variation is also discussed, and calibration techniques are adopted for the static matching accuracy.
AB - Steep-slope heterojunction tunnel field-effect transistor (HTFET) devices promise new opportunities beyond CMOS in low-power high-performance communication applications. In this paper, the circuit design optimization of a low-power 14-bit 1-GS/s current-steering digital-to-analog converter (DAC) using 0.4/0.3 V mixed-supply HTFETs is explored. Based on the device characteristics comparison and circuit analysis, it is shown in this paper that HTFET endorses significant differences in both I-V and C-V due to the steepslope tunneling mechanism and a nature of vertically fabricated structure. While such differences significantly affect the circuit design corners, this paper gives the device-circuit co-optimization for the HTFET DAC, reaching at higher current source output impedance, less nonlinear switching glitch distortions, and thus superior spectral performance over the Si-CMOS DAC. HTFET device variation is also discussed, and calibration techniques are adopted for the static matching accuracy.
UR - http://www.scopus.com/inward/record.url?scp=84949870408&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84949870408&partnerID=8YFLogxK
U2 - 10.1109/TVLSI.2015.2500160
DO - 10.1109/TVLSI.2015.2500160
M3 - Article
AN - SCOPUS:84949870408
SN - 1063-8210
VL - 24
SP - 2299
EP - 2309
JO - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
JF - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
IS - 6
M1 - 7339712
ER -