TY - GEN
T1 - Exploration of vertical MOSFET and tunnel FET device architecture for Sub 10nm node applications
AU - Liu, H.
AU - Mohata, D. K.
AU - Nidhi, A.
AU - Saripalli, V.
AU - Narayanan, V.
AU - Datta, S.
PY - 2012
Y1 - 2012
N2 - A vertical device architecture having ∼40% density improvement over planar for sub-10nm technology node has been evaluated for Si NMOS and III-V HTFET with L g=16nm. For LOP applications including the effect of parasitic elements, the HTFET presents superior energy efficiency and desired low-power analog performance for V DD<60;0.6V, while MOSFET is superior for V DD>0.6V. To further improve MOSFET performance, I ON needs to be improved with higher injection velocity materials (e.g. III-V). For delay reduction, the parasitic capacitances (C ov and C g,fringe) and contact resistance need to be further engineered for both MOSFETs and TFETs.
AB - A vertical device architecture having ∼40% density improvement over planar for sub-10nm technology node has been evaluated for Si NMOS and III-V HTFET with L g=16nm. For LOP applications including the effect of parasitic elements, the HTFET presents superior energy efficiency and desired low-power analog performance for V DD<60;0.6V, while MOSFET is superior for V DD>0.6V. To further improve MOSFET performance, I ON needs to be improved with higher injection velocity materials (e.g. III-V). For delay reduction, the parasitic capacitances (C ov and C g,fringe) and contact resistance need to be further engineered for both MOSFETs and TFETs.
UR - http://www.scopus.com/inward/record.url?scp=84866900895&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84866900895&partnerID=8YFLogxK
U2 - 10.1109/DRC.2012.6256990
DO - 10.1109/DRC.2012.6256990
M3 - Conference contribution
AN - SCOPUS:84866900895
SN - 9781467311618
T3 - Device Research Conference - Conference Digest, DRC
SP - 233
EP - 234
BT - 70th Device Research Conference, DRC 2012 - Conference Digest
T2 - 70th Device Research Conference, DRC 2012
Y2 - 18 June 2012 through 20 June 2012
ER -