Exposure dose effects on the reaction-diffusion process in model extreme ultraviolet photoresists

Kristopher A. Lavery, Bryan D. Vogt, Vivek M. Prabhu, Eric K. Lin, Wen Li Wu, Sushil K. Satija, Kwang Woo Choi

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


The effect of exposure dose on the latent image deprotection profile in a model extreme ultraviolet (EUV) photoresist polymer, poly(hydroxystyrene-co- d9 -tert-butyl acrylate), is measured with neutron reflectometry. As the photoacid concentration is increased by exposure dose, the spatial extent of propagation increases but eventually becomes self-limited by the products of the reaction. A long-range deprotection path occurs with diffusion length between 10 and 100 Å, while an additional subnanometer short-range deprotection length scale proceeds monotonically with dose. These measurements show that the photoacid diffusion length into unexposed regions of a photoresist is limited even in the absence of base quencher additives. These fundamental data can be used to highlight materials effects on photoresist processing and to improve quantitative models for EUV photoresists needed at the sub- 32-nm half pitch lithography.

Original languageEnglish (US)
Pages (from-to)3044-3047
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
StatePublished - 2006

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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