Extracting the Richardson constant: IrOx /n-ZnO Schottky diodes

K. Sarpatwari; O. O. Awadelkarim; M. W. Allen; S. M. Durbin; S. E. Mohney

doi:10.1063/1.3156031

Extracting the Richardson constant: IrOx /n-ZnO Schottky diodes

K. Sarpatwari, O. O. Awadelkarim, M. W. Allen, S. M. Durbin, S. E. Mohney

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

A method is proposed to account for the effects of Schottky barrier height inhomogeneities on the Richardson constant (A) extracted from current-voltage-temperature (I-V-T) measurements. Our approach exploits a correlation between the extracted Richardson constant and effective barrier height. As a test case, the method is applied to I-V-T measurements performed on IrOx /n-ZnO Schottky diodes. A homogeneous A value of 27±7 A cm-2 K-2 is obtained, in close agreement with the theoretically expected value of 32 A cm-2 K-2 for n -type ZnO.

Original language	English (US)
Article number	242110
Journal	Applied Physics Letters
Volume	94
Issue number	24
DOIs	https://doi.org/10.1063/1.3156031
State	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3156031

Cite this

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title = "Extracting the Richardson constant: IrOx /n-ZnO Schottky diodes",

abstract = "A method is proposed to account for the effects of Schottky barrier height inhomogeneities on the Richardson constant (A) extracted from current-voltage-temperature (I-V-T) measurements. Our approach exploits a correlation between the extracted Richardson constant and effective barrier height. As a test case, the method is applied to I-V-T measurements performed on IrOx /n-ZnO Schottky diodes. A homogeneous A value of 27±7 A cm-2 K-2 is obtained, in close agreement with the theoretically expected value of 32 A cm-2 K-2 for n -type ZnO.",

author = "K. Sarpatwari and Awadelkarim, {O. O.} and Allen, {M. W.} and Durbin, {S. M.} and Mohney, {S. E.}",

note = "Funding Information: The Penn State authors are grateful for support from ARL through Grant No. W911NF-07-2-0064 and ARO through Grant Nos. W911NF0510334 and W911NF0910140. The work at the University of Canterbury was supported in part by Marsden Grant No. UOC0604.",

year = "2009",

doi = "10.1063/1.3156031",

language = "English (US)",

volume = "94",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Extracting the Richardson constant

T2 - IrOx /n-ZnO Schottky diodes

AU - Sarpatwari, K.

AU - Awadelkarim, O. O.

AU - Allen, M. W.

AU - Durbin, S. M.

AU - Mohney, S. E.

N1 - Funding Information: The Penn State authors are grateful for support from ARL through Grant No. W911NF-07-2-0064 and ARO through Grant Nos. W911NF0510334 and W911NF0910140. The work at the University of Canterbury was supported in part by Marsden Grant No. UOC0604.

PY - 2009

Y1 - 2009

N2 - A method is proposed to account for the effects of Schottky barrier height inhomogeneities on the Richardson constant (A) extracted from current-voltage-temperature (I-V-T) measurements. Our approach exploits a correlation between the extracted Richardson constant and effective barrier height. As a test case, the method is applied to I-V-T measurements performed on IrOx /n-ZnO Schottky diodes. A homogeneous A value of 27±7 A cm-2 K-2 is obtained, in close agreement with the theoretically expected value of 32 A cm-2 K-2 for n -type ZnO.

AB - A method is proposed to account for the effects of Schottky barrier height inhomogeneities on the Richardson constant (A) extracted from current-voltage-temperature (I-V-T) measurements. Our approach exploits a correlation between the extracted Richardson constant and effective barrier height. As a test case, the method is applied to I-V-T measurements performed on IrOx /n-ZnO Schottky diodes. A homogeneous A value of 27±7 A cm-2 K-2 is obtained, in close agreement with the theoretically expected value of 32 A cm-2 K-2 for n -type ZnO.

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ER -

Extracting the Richardson constant: IrOx /n-ZnO Schottky diodes

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