Abstract
A method is proposed to account for the effects of Schottky barrier height inhomogeneities on the Richardson constant (A) extracted from current-voltage-temperature (I-V-T) measurements. Our approach exploits a correlation between the extracted Richardson constant and effective barrier height. As a test case, the method is applied to I-V-T measurements performed on IrOx /n-ZnO Schottky diodes. A homogeneous A value of 27±7 A cm-2 K-2 is obtained, in close agreement with the theoretically expected value of 32 A cm-2 K-2 for n -type ZnO.
| Original language | English (US) |
|---|---|
| Article number | 242110 |
| Journal | Applied Physics Letters |
| Volume | 94 |
| Issue number | 24 |
| DOIs | |
| State | Published - 2009 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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