Extracting the Schottky barrier height from axial contacts to semiconductor nanowires

K. Sarpatwari; N. S. Dellas; O. O. Awadelkarim; S. E. Mohney

doi:10.1016/j.sse.2010.03.006

Extracting the Schottky barrier height from axial contacts to semiconductor nanowires

K. Sarpatwari, N. S. Dellas, O. O. Awadelkarim, S. E. Mohney

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Geometrical and surface effects can significantly alter conduction through metal/semiconductor nanowire (NW) contacts. In this study, we use three dimensional device simulations to examine these effects in detail. Based on the results of these simulations, a methodology is proposed for the extraction of Schottky barrier heights of contacts to semiconductor nanowires. The Schottky barrier height extracted from the current-voltage (I-V) characteristics can differ from the true barrier height due to tunneling contributions localized at the metal/nanowire interface along the nanowire periphery. The outlined method is used to analyze experimental I-V characteristics of a surround-gate axially-aligned θ-Ni2Si/n-Si nanowire Schottky barrier contact.

Original language	English (US)
Pages (from-to)	689-695
Number of pages	7
Journal	Solid-State Electronics
Volume	54
Issue number	7
DOIs	https://doi.org/10.1016/j.sse.2010.03.006
State	Published - Jul 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2010.03.006

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@article{fe131d792cf54f69a2f36a7cb00950da,

title = "Extracting the Schottky barrier height from axial contacts to semiconductor nanowires",

abstract = "Geometrical and surface effects can significantly alter conduction through metal/semiconductor nanowire (NW) contacts. In this study, we use three dimensional device simulations to examine these effects in detail. Based on the results of these simulations, a methodology is proposed for the extraction of Schottky barrier heights of contacts to semiconductor nanowires. The Schottky barrier height extracted from the current-voltage (I-V) characteristics can differ from the true barrier height due to tunneling contributions localized at the metal/nanowire interface along the nanowire periphery. The outlined method is used to analyze experimental I-V characteristics of a surround-gate axially-aligned θ-Ni2Si/n-Si nanowire Schottky barrier contact.",

author = "K. Sarpatwari and Dellas, {N. S.} and Awadelkarim, {O. O.} and Mohney, {S. E.}",

note = "Funding Information: The authors are grateful to the Army Research Office (ARO) through W911NF0510334 and W911NF0910140 and the National Science Foundation (NSF) through ECS-0609282 for support and for the use of PSU NNIN facilities under NSF Grant 0335765 . They are also grateful to Dr. Suman Datta for his useful suggestions, Dr. Theresa Mayer for access to her laboratory, and Dr. Joan Redwing for providing the nanowires. ",

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doi = "10.1016/j.sse.2010.03.006",

language = "English (US)",

volume = "54",

pages = "689--695",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

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T1 - Extracting the Schottky barrier height from axial contacts to semiconductor nanowires

AU - Sarpatwari, K.

AU - Dellas, N. S.

AU - Awadelkarim, O. O.

AU - Mohney, S. E.

N1 - Funding Information: The authors are grateful to the Army Research Office (ARO) through W911NF0510334 and W911NF0910140 and the National Science Foundation (NSF) through ECS-0609282 for support and for the use of PSU NNIN facilities under NSF Grant 0335765 . They are also grateful to Dr. Suman Datta for his useful suggestions, Dr. Theresa Mayer for access to her laboratory, and Dr. Joan Redwing for providing the nanowires.

PY - 2010/7

Y1 - 2010/7

N2 - Geometrical and surface effects can significantly alter conduction through metal/semiconductor nanowire (NW) contacts. In this study, we use three dimensional device simulations to examine these effects in detail. Based on the results of these simulations, a methodology is proposed for the extraction of Schottky barrier heights of contacts to semiconductor nanowires. The Schottky barrier height extracted from the current-voltage (I-V) characteristics can differ from the true barrier height due to tunneling contributions localized at the metal/nanowire interface along the nanowire periphery. The outlined method is used to analyze experimental I-V characteristics of a surround-gate axially-aligned θ-Ni2Si/n-Si nanowire Schottky barrier contact.

AB - Geometrical and surface effects can significantly alter conduction through metal/semiconductor nanowire (NW) contacts. In this study, we use three dimensional device simulations to examine these effects in detail. Based on the results of these simulations, a methodology is proposed for the extraction of Schottky barrier heights of contacts to semiconductor nanowires. The Schottky barrier height extracted from the current-voltage (I-V) characteristics can differ from the true barrier height due to tunneling contributions localized at the metal/nanowire interface along the nanowire periphery. The outlined method is used to analyze experimental I-V characteristics of a surround-gate axially-aligned θ-Ni2Si/n-Si nanowire Schottky barrier contact.

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DO - 10.1016/j.sse.2010.03.006

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EP - 695

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 7

ER -

Extracting the Schottky barrier height from axial contacts to semiconductor nanowires

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All Science Journal Classification (ASJC) codes

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