Extraordinary tunnel electroresistance in layer-by-layer engineered van der Waals ferroelectric tunnel junctions

Qinqin Wang, Ti Xie, Nicholas A. Blumenschein, Zhihao Song, Jimmy C. Kotsakidis, Aubrey T. Hanbicki, Michael A. Susner, Benjamin S. Conner, Qishuo Tan, Seng Huat Lee, Zhiqiang Mao, Xi Ling, Tony Low, Jian Ping Wang, Adam L. Friedman, Cheng Gong

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


The ability to engineer potential profiles of multilayered materials is critical for designing high-performance tunneling devices such as ferroelectric tunnel junctions (FTJs). FTJs comprise asymmetric electrodes and a ferroelectric spacer, promising semiconductor-platform-compatible logic and memory devices. However, traditional FTJs consist of metal/oxide/metal multilayered structures with unavoidable defects and interfacial trap states, which often cause compromised tunneling electroresistance (TER). Here, we constructed van der Waals (vdW) FTJs by a layered ferroelectric CuInP2S6 (CIPS) and graphene. Owing to the gigantic ferroelectric modulation of the chemical potentials in graphene by as large as ∼1 eV, we demonstrated a giant TER of 109. While inserting just a monolayer MoS2 between CIPS/graphene, the off state is further suppressed, leading to >1010 TER. Our discovery opens a new solid-state paradigm where potential profiles can be unprecedentedly engineered in a layer-by-layer fashion, fundamentally strengthening the ability to manipulate electrons’ tunneling behaviors and design advanced tunneling devices.

Original languageEnglish (US)
Pages (from-to)4425-4436
Number of pages12
Issue number12
StatePublished - Dec 7 2022

All Science Journal Classification (ASJC) codes

  • General Materials Science


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