Fabication of GaN Islands at Specific Locations on Si Substrates using FIB Induced Ga Surface Precipitation and Plasma Nitridation

Hao Wang; Jennifer L. Gray

doi:10.1017/S1431927612004904

Fabication of GaN Islands at Specific Locations on Si Substrates using FIB Induced Ga Surface Precipitation and Plasma Nitridation

Hao Wang
, Jennifer L. Gray

Materials Characterization Lab

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	610-611
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	18
Issue number	S2
DOIs	https://doi.org/10.1017/S1431927612004904
State	Published - Jul 2012

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Instrumentation

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title = "Fabication of GaN Islands at Specific Locations on Si Substrates using FIB Induced Ga Surface Precipitation and Plasma Nitridation",

author = "Hao Wang and Gray, \{Jennifer L.\}",

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T1 - Fabication of GaN Islands at Specific Locations on Si Substrates using FIB Induced Ga Surface Precipitation and Plasma Nitridation

AU - Wang, Hao

AU - Gray, Jennifer L.

PY - 2012/7

Y1 - 2012/7

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DO - 10.1017/S1431927612004904

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VL - 18

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JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - S2

ER -

Fabication of GaN Islands at Specific Locations on Si Substrates using FIB Induced Ga Surface Precipitation and Plasma Nitridation

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