Fabrication and characterization of axially doped silicon nanowire tunnel field-effect transistors

Aaron L. Vallett, Sharis Minassian, Phil Kaszuba, Suman Datta, Joan M. Redwing, Theresa S. Mayer

Research output: Contribution to journalArticlepeer-review

77 Scopus citations


Tunnel field-effect transistors were fabricated from axially doped silicon nanowire p-n junctions grown via the vapor-liquid-solid method. Following dry thermal oxidation to form a gate dielectric shell, the nanowires have a p-n-n+ doping profile with an abrupt n-n+ junction, which was revealed by scanning capacitance microscopy. The lightly doped n-segment can be inverted to p+ by modulating the top gate bias, thus forming an abrupt gated p+-n+ junction. A band-to-band tunneling current flows through the electrostatically doped p+-n+ junction when it is reverse biased. Current-voltage measurements performed from 375 down to 4.2 K show two different regimes of tunneling current at high and low temperatures, indicating that there are both direct band-to-band and trap-assisted tunneling paths.

Original languageEnglish (US)
Pages (from-to)4813-4818
Number of pages6
JournalNano letters
Issue number12
StatePublished - Dec 8 2010

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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