Fabrication and characterization of enhanced barrier AlGaN/GaN HFET

X. Z. Dang, R. J. Welty, D. Qiao, P. M. Asbeck, S. S. Lau, E. T. Yu, K. S. Boutros, J. M. Redwing

Research output: Contribution to journalArticlepeer-review

38 Scopus citations


An AlGaN/GaN HFET incorporating a piezoelectrically enhanced two-layer barrier structure has been fabricated and characterized. The gate leakage current was observed to be suppressed by one order of magnitude, compared to that in a conventional AlGaN/GaN HFET. Breakdown voltages in the piezoelectrically enhanced and conventional HFET structures are approximately 100 V and have positive temperature coefficients.

Original languageEnglish (US)
Pages (from-to)602-603
Number of pages2
JournalElectronics Letters
Issue number7
StatePublished - Apr 1 1999

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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