Abstract
An AlGaN/GaN HFET incorporating a piezoelectrically enhanced two-layer barrier structure has been fabricated and characterized. The gate leakage current was observed to be suppressed by one order of magnitude, compared to that in a conventional AlGaN/GaN HFET. Breakdown voltages in the piezoelectrically enhanced and conventional HFET structures are approximately 100 V and have positive temperature coefficients.
Original language | English (US) |
---|---|
Pages (from-to) | 602-603 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 35 |
Issue number | 7 |
DOIs | |
State | Published - Apr 1 1999 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering