Fabrication and characterization of flexible thin film transistors on thin solution-cast substrates

Haoyu U. Li; Thomas N. Jackson

doi:10.1109/wmed.2016.7458277

Fabrication and characterization of flexible thin film transistors on thin solution-cast substrates

Haoyu U. Li, Thomas N. Jackson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We report flexible ZnO thin film transistors (TFTs) fabricated on 5 µm thick solution-cast polyimide substrate. Plasma enhanced atomic layer deposition (PEALD) was used to deposit Al₂O₃ dielectric and ZnO active layers respectively. The highest processing temperature was 200 °C. The flexible ZnO TFTs we fabricated have very similar characteristics to devices fabricated on glass substrates. Typical TFT mobility was greater than 12 cm²/V·s for a gate electric field of 2 MV/cm. Simple mechanical releasing can be used to detach the polyimide substrate from the rigid carrier. Device performance showed almost no degradation after releasing. Repeated bending test using homemade roller-flex testing apparatus was conducted. The flexible ZnO TFTs were repeatedly bent and flattened to a minimum radius of 1.6 mm for more than 10,000 cycles with little change in device characteristics. These results demonstrated solution-cast thin polymeric film as a simple but profound path to oxide semiconductor flexible electronics.

Original language	English (US)
Title of host publication	2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781467383974
DOIs	https://doi.org/10.1109/wmed.2016.7458277
State	Published - 2016
Event	14th Annual IEEE Workshop on Microelectronics and Electron Devices, WMED 2016 - Boise, United States Duration: Apr 15 2016 → …

Publication series

Name	2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016
Volume	2016-January

Other

Other	14th Annual IEEE Workshop on Microelectronics and Electron Devices, WMED 2016
Country/Territory	United States
City	Boise
Period	4/15/16 → …

All Science Journal Classification (ASJC) codes

Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/wmed.2016.7458277

Cite this

Li, H. U., & Jackson, T. N. (2016). Fabrication and characterization of flexible thin film transistors on thin solution-cast substrates. In 2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016 (pp. 1-4). (2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016; Vol. 2016-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/wmed.2016.7458277

@inproceedings{b14c53e51e6b4b93be356e7eb38dc877,

title = "Fabrication and characterization of flexible thin film transistors on thin solution-cast substrates",

abstract = "We report flexible ZnO thin film transistors (TFTs) fabricated on 5 µm thick solution-cast polyimide substrate. Plasma enhanced atomic layer deposition (PEALD) was used to deposit Al2O3 dielectric and ZnO active layers respectively. The highest processing temperature was 200 °C. The flexible ZnO TFTs we fabricated have very similar characteristics to devices fabricated on glass substrates. Typical TFT mobility was greater than 12 cm2/V·s for a gate electric field of 2 MV/cm. Simple mechanical releasing can be used to detach the polyimide substrate from the rigid carrier. Device performance showed almost no degradation after releasing. Repeated bending test using homemade roller-flex testing apparatus was conducted. The flexible ZnO TFTs were repeatedly bent and flattened to a minimum radius of 1.6 mm for more than 10,000 cycles with little change in device characteristics. These results demonstrated solution-cast thin polymeric film as a simple but profound path to oxide semiconductor flexible electronics.",

author = "Li, {Haoyu U.} and Jackson, {Thomas N.}",

note = "Funding Information: VI. ACKNOWLEDGMENT The authors would like to thank Dr. Elissei Iagodkine, Dr. Luke Bu and Dr. Anatoliy Sokolov from the Dow Chemical Company for helpful discussions. Funding support from the Dow Chemical Company is greatly appreciated. Publisher Copyright: {\textcopyright} 2018 Joule Inc. or its licensors; 14th Annual IEEE Workshop on Microelectronics and Electron Devices, WMED 2016 ; Conference date: 15-04-2016",

year = "2016",

doi = "10.1109/wmed.2016.7458277",

language = "English (US)",

series = "2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--4",

booktitle = "2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016",

address = "United States",

}

Li, HU & Jackson, TN 2016, Fabrication and characterization of flexible thin film transistors on thin solution-cast substrates. in 2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016. 2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016, vol. 2016-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 14th Annual IEEE Workshop on Microelectronics and Electron Devices, WMED 2016, Boise, United States, 4/15/16. https://doi.org/10.1109/wmed.2016.7458277

Fabrication and characterization of flexible thin film transistors on thin solution-cast substrates. / Li, Haoyu U.; Jackson, Thomas N.
2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 1-4 (2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016; Vol. 2016-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Li, Haoyu U.

AU - Jackson, Thomas N.

N1 - Funding Information: VI. ACKNOWLEDGMENT The authors would like to thank Dr. Elissei Iagodkine, Dr. Luke Bu and Dr. Anatoliy Sokolov from the Dow Chemical Company for helpful discussions. Funding support from the Dow Chemical Company is greatly appreciated. Publisher Copyright: © 2018 Joule Inc. or its licensors

PY - 2016

Y1 - 2016

N2 - We report flexible ZnO thin film transistors (TFTs) fabricated on 5 µm thick solution-cast polyimide substrate. Plasma enhanced atomic layer deposition (PEALD) was used to deposit Al2O3 dielectric and ZnO active layers respectively. The highest processing temperature was 200 °C. The flexible ZnO TFTs we fabricated have very similar characteristics to devices fabricated on glass substrates. Typical TFT mobility was greater than 12 cm2/V·s for a gate electric field of 2 MV/cm. Simple mechanical releasing can be used to detach the polyimide substrate from the rigid carrier. Device performance showed almost no degradation after releasing. Repeated bending test using homemade roller-flex testing apparatus was conducted. The flexible ZnO TFTs were repeatedly bent and flattened to a minimum radius of 1.6 mm for more than 10,000 cycles with little change in device characteristics. These results demonstrated solution-cast thin polymeric film as a simple but profound path to oxide semiconductor flexible electronics.

AB - We report flexible ZnO thin film transistors (TFTs) fabricated on 5 µm thick solution-cast polyimide substrate. Plasma enhanced atomic layer deposition (PEALD) was used to deposit Al2O3 dielectric and ZnO active layers respectively. The highest processing temperature was 200 °C. The flexible ZnO TFTs we fabricated have very similar characteristics to devices fabricated on glass substrates. Typical TFT mobility was greater than 12 cm2/V·s for a gate electric field of 2 MV/cm. Simple mechanical releasing can be used to detach the polyimide substrate from the rigid carrier. Device performance showed almost no degradation after releasing. Repeated bending test using homemade roller-flex testing apparatus was conducted. The flexible ZnO TFTs were repeatedly bent and flattened to a minimum radius of 1.6 mm for more than 10,000 cycles with little change in device characteristics. These results demonstrated solution-cast thin polymeric film as a simple but profound path to oxide semiconductor flexible electronics.

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BT - 2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 14th Annual IEEE Workshop on Microelectronics and Electron Devices, WMED 2016

Y2 - 15 April 2016

ER -

Fabrication and characterization of flexible thin film transistors on thin solution-cast substrates

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