Fabrication and characterization of modulation-doped ZnSe/(Zn,Cd)Se (110) quantum wells: A new system for spin coherence studies

K. C. Ku; S. H. Chun; W. H. Wang; W. Fadgen; D. A. Issadore; N. Samarth; R. J. Epstein; D. D. Awschalom

doi:10.1007/s10948-005-3356-9

Fabrication and characterization of modulation-doped ZnSe/(Zn,Cd)Se (110) quantum wells: A new system for spin coherence studies

K. C. Ku
, S. H. Chun
, W. H. Wang
, W. Fadgen
, D. A. Issadore
, N. Samarth
, R. J. Epstein
, D. D. Awschalom

Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We describe the growth of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on (110) GaAs substrates. Unlike the well-known protocol for the epitaxy of ZnSe-based quantum structures on (001) GaAs, we find that the fabrication of quantum well structures on (110) GaAs requires significantly different growth conditions and sample architecture. We use magnetotransport measurements to confirm the formation of a two-dimensional electron gas in these samples, and then measure transverse electron spin relaxation times using time-resolved Faraday rotation. In contrast to expectations based upon known spin relaxation mechanisms, we find surprisingly little difference between the spin lifetimes in these (110)-oriented samples in comparison with (100)-oriented control samples.

Original language	English (US)
Pages (from-to)	185-188
Number of pages	4
Journal	Journal of Superconductivity and Novel Magnetism
Volume	18
Issue number	2
DOIs	https://doi.org/10.1007/s10948-005-3356-9
State	Published - 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1007/s10948-005-3356-9

Cite this

@article{98a52aa4757748a2b9f4e63547a426e8,

title = "Fabrication and characterization of modulation-doped ZnSe/(Zn,Cd)Se (110) quantum wells: A new system for spin coherence studies",

abstract = "We describe the growth of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on (110) GaAs substrates. Unlike the well-known protocol for the epitaxy of ZnSe-based quantum structures on (001) GaAs, we find that the fabrication of quantum well structures on (110) GaAs requires significantly different growth conditions and sample architecture. We use magnetotransport measurements to confirm the formation of a two-dimensional electron gas in these samples, and then measure transverse electron spin relaxation times using time-resolved Faraday rotation. In contrast to expectations based upon known spin relaxation mechanisms, we find surprisingly little difference between the spin lifetimes in these (110)-oriented samples in comparison with (100)-oriented control samples.",

author = "Ku, \{K. C.\} and Chun, \{S. H.\} and Wang, \{W. H.\} and W. Fadgen and Issadore, \{D. A.\} and N. Samarth and Epstein, \{R. J.\} and Awschalom, \{D. D.\}",

note = "Funding Information: This work was supported by the DARPA QUIST program.",

year = "2005",

doi = "10.1007/s10948-005-3356-9",

language = "English (US)",

volume = "18",

pages = "185--188",

journal = "Journal of Superconductivity and Novel Magnetism",

issn = "1557-1939",

publisher = "Springer New York",

number = "2",

}

TY - JOUR

T1 - Fabrication and characterization of modulation-doped ZnSe/(Zn,Cd)Se (110) quantum wells

T2 - A new system for spin coherence studies

AU - Ku, K. C.

AU - Chun, S. H.

AU - Wang, W. H.

AU - Fadgen, W.

AU - Issadore, D. A.

AU - Samarth, N.

AU - Epstein, R. J.

AU - Awschalom, D. D.

N1 - Funding Information: This work was supported by the DARPA QUIST program.

PY - 2005

Y1 - 2005

N2 - We describe the growth of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on (110) GaAs substrates. Unlike the well-known protocol for the epitaxy of ZnSe-based quantum structures on (001) GaAs, we find that the fabrication of quantum well structures on (110) GaAs requires significantly different growth conditions and sample architecture. We use magnetotransport measurements to confirm the formation of a two-dimensional electron gas in these samples, and then measure transverse electron spin relaxation times using time-resolved Faraday rotation. In contrast to expectations based upon known spin relaxation mechanisms, we find surprisingly little difference between the spin lifetimes in these (110)-oriented samples in comparison with (100)-oriented control samples.

AB - We describe the growth of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on (110) GaAs substrates. Unlike the well-known protocol for the epitaxy of ZnSe-based quantum structures on (001) GaAs, we find that the fabrication of quantum well structures on (110) GaAs requires significantly different growth conditions and sample architecture. We use magnetotransport measurements to confirm the formation of a two-dimensional electron gas in these samples, and then measure transverse electron spin relaxation times using time-resolved Faraday rotation. In contrast to expectations based upon known spin relaxation mechanisms, we find surprisingly little difference between the spin lifetimes in these (110)-oriented samples in comparison with (100)-oriented control samples.

UR - https://www.scopus.com/pages/publications/18744401901

UR - https://www.scopus.com/pages/publications/18744401901#tab=citedBy

U2 - 10.1007/s10948-005-3356-9

DO - 10.1007/s10948-005-3356-9

M3 - Article

AN - SCOPUS:18744401901

SN - 1557-1939

VL - 18

SP - 185

EP - 188

JO - Journal of Superconductivity and Novel Magnetism

JF - Journal of Superconductivity and Novel Magnetism

IS - 2

ER -

Fabrication and characterization of modulation-doped ZnSe/(Zn,Cd)Se (110) quantum wells: A new system for spin coherence studies

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this