Fabrication and characterization of Si nanocrystals synthesized by electron beam evaporation of Si and SiO2 mixture

Wei Long Li; Rui Jia; Ming Liu; Chen Chen; Chang Qing Xie; Chen Xin Zhu; Hao Feng Li; Pei Wen Zhang; Tian Chun Ye

doi:10.1088/0256-307X/26/4/046801

Fabrication and characterization of Si nanocrystals synthesized by electron beam evaporation of Si and SiO₂ mixture

Wei Long Li, Rui Jia, Ming Liu, Chen Chen, Chang Qing Xie, Chen Xin Zhu, Hao Feng Li, Pei Wen Zhang, Tian Chun Ye

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Silicon nanocrystals synthesized by electron beam (e-beam) evaporation of Si and SiO₂ mixture are studied. Rutherford backscattering spectrometry of the as-deposited Si-rich silicon dioxide or oxide (SRO) thin film shows that after evaporation, the Si and SiO₂ concentration is well kept, indicating that the e-beam evaporation is suitable for evaporating mixtures of Si and SiO₂. The SRO thin films are annealed at different temperatures for two hours to synthesize silicon nanocrystals. For the sample annealed at 1050°C, silicon nanocrystals with different sizes and the mean diameter of 4.5 nm are evidently observed by high resolution transmission electron microscopy (HRTEM). Then the Raman scattering and photoluminescence spectra arising from silicon nanocrystals are further confirmed the above results.

Original language	English (US)
Article number	046801
Journal	Chinese Physics Letters
Volume	26
Issue number	4
DOIs	https://doi.org/10.1088/0256-307X/26/4/046801
State	Published - Jan 1 2009

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1088/0256-307X/26/4/046801

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title = "Fabrication and characterization of Si nanocrystals synthesized by electron beam evaporation of Si and SiO2 mixture",

abstract = "Silicon nanocrystals synthesized by electron beam (e-beam) evaporation of Si and SiO2 mixture are studied. Rutherford backscattering spectrometry of the as-deposited Si-rich silicon dioxide or oxide (SRO) thin film shows that after evaporation, the Si and SiO2 concentration is well kept, indicating that the e-beam evaporation is suitable for evaporating mixtures of Si and SiO2. The SRO thin films are annealed at different temperatures for two hours to synthesize silicon nanocrystals. For the sample annealed at 1050°C, silicon nanocrystals with different sizes and the mean diameter of 4.5 nm are evidently observed by high resolution transmission electron microscopy (HRTEM). Then the Raman scattering and photoluminescence spectra arising from silicon nanocrystals are further confirmed the above results.",

author = "Li, {Wei Long} and Rui Jia and Ming Liu and Chen Chen and Xie, {Chang Qing} and Zhu, {Chen Xin} and Li, {Hao Feng} and Zhang, {Pei Wen} and Ye, {Tian Chun}",

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TY - JOUR

T1 - Fabrication and characterization of Si nanocrystals synthesized by electron beam evaporation of Si and SiO2 mixture

AU - Li, Wei Long

AU - Jia, Rui

AU - Liu, Ming

AU - Chen, Chen

AU - Xie, Chang Qing

AU - Zhu, Chen Xin

AU - Li, Hao Feng

AU - Zhang, Pei Wen

AU - Ye, Tian Chun

PY - 2009/1/1

Y1 - 2009/1/1

N2 - Silicon nanocrystals synthesized by electron beam (e-beam) evaporation of Si and SiO2 mixture are studied. Rutherford backscattering spectrometry of the as-deposited Si-rich silicon dioxide or oxide (SRO) thin film shows that after evaporation, the Si and SiO2 concentration is well kept, indicating that the e-beam evaporation is suitable for evaporating mixtures of Si and SiO2. The SRO thin films are annealed at different temperatures for two hours to synthesize silicon nanocrystals. For the sample annealed at 1050°C, silicon nanocrystals with different sizes and the mean diameter of 4.5 nm are evidently observed by high resolution transmission electron microscopy (HRTEM). Then the Raman scattering and photoluminescence spectra arising from silicon nanocrystals are further confirmed the above results.

AB - Silicon nanocrystals synthesized by electron beam (e-beam) evaporation of Si and SiO2 mixture are studied. Rutherford backscattering spectrometry of the as-deposited Si-rich silicon dioxide or oxide (SRO) thin film shows that after evaporation, the Si and SiO2 concentration is well kept, indicating that the e-beam evaporation is suitable for evaporating mixtures of Si and SiO2. The SRO thin films are annealed at different temperatures for two hours to synthesize silicon nanocrystals. For the sample annealed at 1050°C, silicon nanocrystals with different sizes and the mean diameter of 4.5 nm are evidently observed by high resolution transmission electron microscopy (HRTEM). Then the Raman scattering and photoluminescence spectra arising from silicon nanocrystals are further confirmed the above results.

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JO - Chinese Physics Letters

JF - Chinese Physics Letters

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Fabrication and characterization of Si nanocrystals synthesized by electron beam evaporation of Si and SiO₂ mixture

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