Fabrication and dielectric properties of phase-pure Ba2Ti9O20 microwave resonators

Wen Yi Lin; Rosario A. Gerhardt; Robert F. Speyer; Wesley S. Hackenberger; Thomas R. Shrout

Fabrication and dielectric properties of phase-pure Ba₂Ti₉O₂₀ microwave resonators

Wen Yi Lin, Rosario A. Gerhardt, Robert F. Speyer, Wesley S. Hackenberger, Thomas R. Shrout

Materials Research Institute (MRI)

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

The thermal processing schedules necessary to form phase pure Ba₂Ti₉O₂₀, with and without substitutional solid solution were investigated. Undoped compositions formed the compound most easily under rapid (500 °C/min) heating rates, where diffusional agglomeration of the TiO₂ batch constituent was minimized. The compound formed most easily with minor (0.82%) substitutions of SnO₂ and ZrO₂ for TiO₂. The solubility of Sn in Ba₂Ti₉O₂₀ was higher than that of Zr. Extended heat treatment (16 vs. 6 h at 1390 °C) resulted in volitalization of grain boundary liquid phase, leading to a more porous and slightly degraded resonators. The effects of dopant concentrations and soak periods at 1390 °C on dielectric constants and temperature-dependent quality factors are reported.

Original language	English (US)
Pages (from-to)	501-506
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	453
State	Published - 1997
Event	Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Dec 2 1996 → Dec 5 1996

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{3d34aa42805242ef800f3fd65c3f5d16,

title = "Fabrication and dielectric properties of phase-pure Ba2Ti9O20 microwave resonators",

abstract = "The thermal processing schedules necessary to form phase pure Ba2Ti9O20, with and without substitutional solid solution were investigated. Undoped compositions formed the compound most easily under rapid (500 °C/min) heating rates, where diffusional agglomeration of the TiO2 batch constituent was minimized. The compound formed most easily with minor (0.82%) substitutions of SnO2 and ZrO2 for TiO2. The solubility of Sn in Ba2Ti9O20 was higher than that of Zr. Extended heat treatment (16 vs. 6 h at 1390 °C) resulted in volitalization of grain boundary liquid phase, leading to a more porous and slightly degraded resonators. The effects of dopant concentrations and soak periods at 1390 °C on dielectric constants and temperature-dependent quality factors are reported.",

author = "Lin, {Wen Yi} and Gerhardt, {Rosario A.} and Speyer, {Robert F.} and Hackenberger, {Wesley S.} and Shrout, {Thomas R.}",

year = "1997",

language = "English (US)",

volume = "453",

pages = "501--506",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Symposium ; Conference date: 02-12-1996 Through 05-12-1996",

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TY - JOUR

T1 - Fabrication and dielectric properties of phase-pure Ba2Ti9O20 microwave resonators

AU - Lin, Wen Yi

AU - Gerhardt, Rosario A.

AU - Speyer, Robert F.

AU - Hackenberger, Wesley S.

AU - Shrout, Thomas R.

PY - 1997

Y1 - 1997

N2 - The thermal processing schedules necessary to form phase pure Ba2Ti9O20, with and without substitutional solid solution were investigated. Undoped compositions formed the compound most easily under rapid (500 °C/min) heating rates, where diffusional agglomeration of the TiO2 batch constituent was minimized. The compound formed most easily with minor (0.82%) substitutions of SnO2 and ZrO2 for TiO2. The solubility of Sn in Ba2Ti9O20 was higher than that of Zr. Extended heat treatment (16 vs. 6 h at 1390 °C) resulted in volitalization of grain boundary liquid phase, leading to a more porous and slightly degraded resonators. The effects of dopant concentrations and soak periods at 1390 °C on dielectric constants and temperature-dependent quality factors are reported.

AB - The thermal processing schedules necessary to form phase pure Ba2Ti9O20, with and without substitutional solid solution were investigated. Undoped compositions formed the compound most easily under rapid (500 °C/min) heating rates, where diffusional agglomeration of the TiO2 batch constituent was minimized. The compound formed most easily with minor (0.82%) substitutions of SnO2 and ZrO2 for TiO2. The solubility of Sn in Ba2Ti9O20 was higher than that of Zr. Extended heat treatment (16 vs. 6 h at 1390 °C) resulted in volitalization of grain boundary liquid phase, leading to a more porous and slightly degraded resonators. The effects of dopant concentrations and soak periods at 1390 °C on dielectric constants and temperature-dependent quality factors are reported.

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M3 - Conference article

AN - SCOPUS:0030686052

SN - 0272-9172

VL - 453

SP - 501

EP - 506

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Symposium

Y2 - 2 December 1996 through 5 December 1996

ER -

Fabrication and dielectric properties of phase-pure Ba₂Ti₉O₂₀ microwave resonators

Abstract

All Science Journal Classification (ASJC) codes

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