Fabrication and reliability demonstration of 5μm redistribution layer using low-stress dielectric dry film

Pratik Nimbalkar; Fuhan Liu; Atom Watanabe; David Weyers; Mohanalingam Kathaperumal; Cheng Ping Lin; Fukuya Naohito; Toshiyuki Makita; Naoki Watanabe; Atsushi Kubo; Madhavan Swaminathan; Rao Tummala

doi:10.1109/ECTC32862.2020.00023

Fabrication and reliability demonstration of 5μm redistribution layer using low-stress dielectric dry film

Pratik Nimbalkar, Fuhan Liu, Atom Watanabe, David Weyers, Mohanalingam Kathaperumal, Cheng Ping Lin, Fukuya Naohito, Toshiyuki Makita, Naoki Watanabe, Atsushi Kubo, Madhavan Swaminathan, Rao Tummala

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

Low-stress and low-warpage dielectrics are gaining importance as we move towards large-body Multi-chip Modules (MCMs). This paper demonstrates fabrication of redistribution layer (RDL) with 5 μm linewidth/spacing using a novel low-stress dielectric dry film- PLSF (Panasonic low stress film) as a build-up layer. Microvias formation down to 7 μm diameter has also been demonstrated in this paper. The main feature of PLSF is its low- stress and low-warpage. In this paper, we have studied residual stress characteristics of PLSF and its comparison with the industry-standard dielectric (ISD). The lower tensile modulus of PLSF as compared to ISD results in significantly lower residual stress and warpage on the substrate. Electrical and thermomechanical reliability of RDL with PLSF as build-up layer has also been studied and the results are presented in this paper.

Original language	English (US)
Title of host publication	Proceedings - IEEE 70th Electronic Components and Technology Conference, ECTC 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	62-67
Number of pages	6
ISBN (Electronic)	9781728161808
DOIs	https://doi.org/10.1109/ECTC32862.2020.00023
State	Published - Jun 2020
Event	70th IEEE Electronic Components and Technology Conference, ECTC 2020 - Orlando, United States Duration: Jun 3 2020 → Jun 30 2020

Publication series

Name	Proceedings - Electronic Components and Technology Conference
Volume	2020-June
ISSN (Print)	0569-5503

Conference

Conference	70th IEEE Electronic Components and Technology Conference, ECTC 2020
Country/Territory	United States
City	Orlando
Period	6/3/20 → 6/30/20

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/ECTC32862.2020.00023

Cite this

Nimbalkar, P., Liu, F., Watanabe, A., Weyers, D., Kathaperumal, M., Lin, C. P., Naohito, F., Makita, T., Watanabe, N., Kubo, A., Swaminathan, M., & Tummala, R. (2020). Fabrication and reliability demonstration of 5μm redistribution layer using low-stress dielectric dry film. In Proceedings - IEEE 70th Electronic Components and Technology Conference, ECTC 2020 (pp. 62-67). Article 9159325 (Proceedings - Electronic Components and Technology Conference; Vol. 2020-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC32862.2020.00023

Nimbalkar, Pratik ; Liu, Fuhan ; Watanabe, Atom et al. / Fabrication and reliability demonstration of 5μm redistribution layer using low-stress dielectric dry film. Proceedings - IEEE 70th Electronic Components and Technology Conference, ECTC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 62-67 (Proceedings - Electronic Components and Technology Conference).

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title = "Fabrication and reliability demonstration of 5μm redistribution layer using low-stress dielectric dry film",

abstract = "Low-stress and low-warpage dielectrics are gaining importance as we move towards large-body Multi-chip Modules (MCMs). This paper demonstrates fabrication of redistribution layer (RDL) with 5 μm linewidth/spacing using a novel low-stress dielectric dry film- PLSF (Panasonic low stress film) as a build-up layer. Microvias formation down to 7 μm diameter has also been demonstrated in this paper. The main feature of PLSF is its low- stress and low-warpage. In this paper, we have studied residual stress characteristics of PLSF and its comparison with the industry-standard dielectric (ISD). The lower tensile modulus of PLSF as compared to ISD results in significantly lower residual stress and warpage on the substrate. Electrical and thermomechanical reliability of RDL with PLSF as build-up layer has also been studied and the results are presented in this paper.",

author = "Pratik Nimbalkar and Fuhan Liu and Atom Watanabe and David Weyers and Mohanalingam Kathaperumal and Lin, {Cheng Ping} and Fukuya Naohito and Toshiyuki Makita and Naoki Watanabe and Atsushi Kubo and Madhavan Swaminathan and Rao Tummala",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 70th IEEE Electronic Components and Technology Conference, ECTC 2020 ; Conference date: 03-06-2020 Through 30-06-2020",

year = "2020",

month = jun,

doi = "10.1109/ECTC32862.2020.00023",

language = "English (US)",

series = "Proceedings - Electronic Components and Technology Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "62--67",

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Nimbalkar, P, Liu, F, Watanabe, A, Weyers, D, Kathaperumal, M, Lin, CP, Naohito, F, Makita, T, Watanabe, N, Kubo, A, Swaminathan, M & Tummala, R 2020, Fabrication and reliability demonstration of 5μm redistribution layer using low-stress dielectric dry film. in Proceedings - IEEE 70th Electronic Components and Technology Conference, ECTC 2020., 9159325, Proceedings - Electronic Components and Technology Conference, vol. 2020-June, Institute of Electrical and Electronics Engineers Inc., pp. 62-67, 70th IEEE Electronic Components and Technology Conference, ECTC 2020, Orlando, United States, 6/3/20. https://doi.org/10.1109/ECTC32862.2020.00023

Fabrication and reliability demonstration of 5μm redistribution layer using low-stress dielectric dry film. / Nimbalkar, Pratik; Liu, Fuhan; Watanabe, Atom et al.
Proceedings - IEEE 70th Electronic Components and Technology Conference, ECTC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 62-67 9159325 (Proceedings - Electronic Components and Technology Conference; Vol. 2020-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Fabrication and reliability demonstration of 5μm redistribution layer using low-stress dielectric dry film

AU - Nimbalkar, Pratik

AU - Liu, Fuhan

AU - Watanabe, Atom

AU - Weyers, David

AU - Kathaperumal, Mohanalingam

AU - Lin, Cheng Ping

AU - Naohito, Fukuya

AU - Makita, Toshiyuki

AU - Watanabe, Naoki

AU - Kubo, Atsushi

AU - Swaminathan, Madhavan

AU - Tummala, Rao

PY - 2020/6

Y1 - 2020/6

N2 - Low-stress and low-warpage dielectrics are gaining importance as we move towards large-body Multi-chip Modules (MCMs). This paper demonstrates fabrication of redistribution layer (RDL) with 5 μm linewidth/spacing using a novel low-stress dielectric dry film- PLSF (Panasonic low stress film) as a build-up layer. Microvias formation down to 7 μm diameter has also been demonstrated in this paper. The main feature of PLSF is its low- stress and low-warpage. In this paper, we have studied residual stress characteristics of PLSF and its comparison with the industry-standard dielectric (ISD). The lower tensile modulus of PLSF as compared to ISD results in significantly lower residual stress and warpage on the substrate. Electrical and thermomechanical reliability of RDL with PLSF as build-up layer has also been studied and the results are presented in this paper.

AB - Low-stress and low-warpage dielectrics are gaining importance as we move towards large-body Multi-chip Modules (MCMs). This paper demonstrates fabrication of redistribution layer (RDL) with 5 μm linewidth/spacing using a novel low-stress dielectric dry film- PLSF (Panasonic low stress film) as a build-up layer. Microvias formation down to 7 μm diameter has also been demonstrated in this paper. The main feature of PLSF is its low- stress and low-warpage. In this paper, we have studied residual stress characteristics of PLSF and its comparison with the industry-standard dielectric (ISD). The lower tensile modulus of PLSF as compared to ISD results in significantly lower residual stress and warpage on the substrate. Electrical and thermomechanical reliability of RDL with PLSF as build-up layer has also been studied and the results are presented in this paper.

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M3 - Conference contribution

AN - SCOPUS:85090277433

T3 - Proceedings - Electronic Components and Technology Conference

SP - 62

EP - 67

BT - Proceedings - IEEE 70th Electronic Components and Technology Conference, ECTC 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 70th IEEE Electronic Components and Technology Conference, ECTC 2020

Y2 - 3 June 2020 through 30 June 2020

ER -

Nimbalkar P, Liu F, Watanabe A, Weyers D, Kathaperumal M, Lin CP et al. Fabrication and reliability demonstration of 5μm redistribution layer using low-stress dielectric dry film. In Proceedings - IEEE 70th Electronic Components and Technology Conference, ECTC 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 62-67. 9159325. (Proceedings - Electronic Components and Technology Conference). doi: 10.1109/ECTC32862.2020.00023

Fabrication and reliability demonstration of 5μm redistribution layer using low-stress dielectric dry film

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