Fabrication and transport studies on PrBa2(Cu1-xMx)3O7: M = Ga, Zn, and Co

U. Tipparach; T. P. Chen; J. L. Wagner; K. Wu; Q. Y. Chen; Q. Li; J. T. Wang; H. C. Yang; H. E. Horng

doi:10.1016/S0921-4534(01)00807-3

Fabrication and transport studies on PrBa₂(Cu_1-xM_x)₃O₇: M = Ga, Zn, and Co

U. Tipparach, T. P. Chen, J. L. Wagner, K. Wu, Q. Y. Chen, Q. Li, J. T. Wang, H. C. Yang, H. E. Horng

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We have fabricated M-doped PrBa₂Cu₃O₇ (Pr123), i.e. PrBa₂(Cu_1-xM_x)₃O₇ for M = Zn, Ga, and Co, with x = 0.05, 0.10, 0.15, and 0.20. Experimental data indicates single phase samples for the Ga and Co doping up to 20% level. Second phases appear in Zn-doped samples when the doping level reaches 0.15. At 77 K the electrical resistivity of these compounds is several orders of magnitude higher than that of undoped Pr123. We also found no orthorhombic to tetragonal phase transition in the doped samples with all samples remaining in orthorhombic. Their lattices parameters are very close to those of YBa₂Cu₃O_7-δ (Y123). For this reason these compounds may serve as improved buffer-layer materials for Y123 superconducting electronic circuits and devices.

Original language	English (US)
Pages (from-to)	404-407
Number of pages	4
Journal	Physica C: Superconductivity and its applications
Volume	364-365
DOIs	https://doi.org/10.1016/S0921-4534(01)00807-3
State	Published - Nov 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4534(01)00807-3

Cite this

@article{bd8eaa96c3e847e2b459ab83b08a09c5,

title = "Fabrication and transport studies on PrBa2(Cu1-xMx)3O7: M = Ga, Zn, and Co",

abstract = "We have fabricated M-doped PrBa2Cu3O7 (Pr123), i.e. PrBa2(Cu1-xMx)3O7 for M = Zn, Ga, and Co, with x = 0.05, 0.10, 0.15, and 0.20. Experimental data indicates single phase samples for the Ga and Co doping up to 20% level. Second phases appear in Zn-doped samples when the doping level reaches 0.15. At 77 K the electrical resistivity of these compounds is several orders of magnitude higher than that of undoped Pr123. We also found no orthorhombic to tetragonal phase transition in the doped samples with all samples remaining in orthorhombic. Their lattices parameters are very close to those of YBa2Cu3O7-δ (Y123). For this reason these compounds may serve as improved buffer-layer materials for Y123 superconducting electronic circuits and devices.",

author = "U. Tipparach and Chen, {T. P.} and Wagner, {J. L.} and K. Wu and Chen, {Q. Y.} and Q. Li and Wang, {J. T.} and Yang, {H. C.} and Horng, {H. E.}",

note = "Funding Information: This work is supported by US Air Force under the research grant #49620-98-1-10488 and by NSF NDEPSCoR grant #9874802.",

year = "2001",

month = nov,

doi = "10.1016/S0921-4534(01)00807-3",

language = "English (US)",

volume = "364-365",

pages = "404--407",

journal = "Physica C: Superconductivity and its applications",

issn = "0921-4534",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Fabrication and transport studies on PrBa2(Cu1-xMx)3O7

T2 - M = Ga, Zn, and Co

AU - Tipparach, U.

AU - Chen, T. P.

AU - Wagner, J. L.

AU - Wu, K.

AU - Chen, Q. Y.

AU - Li, Q.

AU - Wang, J. T.

AU - Yang, H. C.

AU - Horng, H. E.

N1 - Funding Information: This work is supported by US Air Force under the research grant #49620-98-1-10488 and by NSF NDEPSCoR grant #9874802.

PY - 2001/11

Y1 - 2001/11

N2 - We have fabricated M-doped PrBa2Cu3O7 (Pr123), i.e. PrBa2(Cu1-xMx)3O7 for M = Zn, Ga, and Co, with x = 0.05, 0.10, 0.15, and 0.20. Experimental data indicates single phase samples for the Ga and Co doping up to 20% level. Second phases appear in Zn-doped samples when the doping level reaches 0.15. At 77 K the electrical resistivity of these compounds is several orders of magnitude higher than that of undoped Pr123. We also found no orthorhombic to tetragonal phase transition in the doped samples with all samples remaining in orthorhombic. Their lattices parameters are very close to those of YBa2Cu3O7-δ (Y123). For this reason these compounds may serve as improved buffer-layer materials for Y123 superconducting electronic circuits and devices.

AB - We have fabricated M-doped PrBa2Cu3O7 (Pr123), i.e. PrBa2(Cu1-xMx)3O7 for M = Zn, Ga, and Co, with x = 0.05, 0.10, 0.15, and 0.20. Experimental data indicates single phase samples for the Ga and Co doping up to 20% level. Second phases appear in Zn-doped samples when the doping level reaches 0.15. At 77 K the electrical resistivity of these compounds is several orders of magnitude higher than that of undoped Pr123. We also found no orthorhombic to tetragonal phase transition in the doped samples with all samples remaining in orthorhombic. Their lattices parameters are very close to those of YBa2Cu3O7-δ (Y123). For this reason these compounds may serve as improved buffer-layer materials for Y123 superconducting electronic circuits and devices.

UR - http://www.scopus.com/inward/record.url?scp=18344415969&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18344415969&partnerID=8YFLogxK

U2 - 10.1016/S0921-4534(01)00807-3

DO - 10.1016/S0921-4534(01)00807-3

M3 - Article

AN - SCOPUS:18344415969

SN - 0921-4534

VL - 364-365

SP - 404

EP - 407

JO - Physica C: Superconductivity and its applications

JF - Physica C: Superconductivity and its applications

ER -

Fabrication and transport studies on PrBa₂(Cu_1-xM_x)₃O₇: M = Ga, Zn, and Co

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this