Fabrication of chalcogenide glass waveguide for IR evanescent wave sensors

Ashtosh Ganjoo; H. Jain; J. V. Ryan; R. Song; R. Chanda; J. Irudayaraf; Y. J. Ding; C. G. Pantano

doi:10.1117/12.573900

Fabrication of chalcogenide glass waveguide for IR evanescent wave sensors

Ashtosh Ganjoo, H. Jain, J. V. Ryan, R. Song, R. Chanda, J. Irudayaraf, Y. J. Ding, C. G. Pantano

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Thin film multi-layered chalcogenide glass waveguide structures have been fabricated for evanescent wave sensing of bio toxins and other applications. Thin films of Ge containing chalcogenides have been deposited onto Si substrates, with a-GeSe₂ as the cladding layer and a-GeSbSe as the core layer to form the slab waveguide. Channel waveguides have been written in the slab waveguides by appropriate light the through a mask. The photo-induced structural changes in the core layer selectively enhance refractive index at the portions of interest and thus confining the light to the channels. The waveguides have been characterized and tested for the guiding of light.

Original language	English (US)
Article number	105
Pages (from-to)	637-642
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5593
DOIs	https://doi.org/10.1117/12.573900
State	Published - 2004
Event	Nanosensing Materials and Devices - Philadelphia, PA, United States Duration: Oct 25 2004 → Oct 28 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Fabrication of chalcogenide glass waveguide for IR evanescent wave sensors",

abstract = "Thin film multi-layered chalcogenide glass waveguide structures have been fabricated for evanescent wave sensing of bio toxins and other applications. Thin films of Ge containing chalcogenides have been deposited onto Si substrates, with a-GeSe2 as the cladding layer and a-GeSbSe as the core layer to form the slab waveguide. Channel waveguides have been written in the slab waveguides by appropriate light the through a mask. The photo-induced structural changes in the core layer selectively enhance refractive index at the portions of interest and thus confining the light to the channels. The waveguides have been characterized and tested for the guiding of light.",

author = "Ashtosh Ganjoo and H. Jain and Ryan, {J. V.} and R. Song and R. Chanda and J. Irudayaraf and Ding, {Y. J.} and Pantano, {C. G.}",

year = "2004",

doi = "10.1117/12.573900",

language = "English (US)",

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pages = "637--642",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Nanosensing Materials and Devices ; Conference date: 25-10-2004 Through 28-10-2004",

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TY - JOUR

T1 - Fabrication of chalcogenide glass waveguide for IR evanescent wave sensors

AU - Ganjoo, Ashtosh

AU - Jain, H.

AU - Ryan, J. V.

AU - Song, R.

AU - Chanda, R.

AU - Irudayaraf, J.

AU - Ding, Y. J.

AU - Pantano, C. G.

PY - 2004

Y1 - 2004

N2 - Thin film multi-layered chalcogenide glass waveguide structures have been fabricated for evanescent wave sensing of bio toxins and other applications. Thin films of Ge containing chalcogenides have been deposited onto Si substrates, with a-GeSe2 as the cladding layer and a-GeSbSe as the core layer to form the slab waveguide. Channel waveguides have been written in the slab waveguides by appropriate light the through a mask. The photo-induced structural changes in the core layer selectively enhance refractive index at the portions of interest and thus confining the light to the channels. The waveguides have been characterized and tested for the guiding of light.

AB - Thin film multi-layered chalcogenide glass waveguide structures have been fabricated for evanescent wave sensing of bio toxins and other applications. Thin films of Ge containing chalcogenides have been deposited onto Si substrates, with a-GeSe2 as the cladding layer and a-GeSbSe as the core layer to form the slab waveguide. Channel waveguides have been written in the slab waveguides by appropriate light the through a mask. The photo-induced structural changes in the core layer selectively enhance refractive index at the portions of interest and thus confining the light to the channels. The waveguides have been characterized and tested for the guiding of light.

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DO - 10.1117/12.573900

M3 - Conference article

AN - SCOPUS:17044372034

SN - 0277-786X

VL - 5593

SP - 637

EP - 642

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 105

T2 - Nanosensing Materials and Devices

Y2 - 25 October 2004 through 28 October 2004

ER -

Fabrication of chalcogenide glass waveguide for IR evanescent wave sensors

Abstract

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