Fabrication of flexible device based on PAN-PZT thin films by laser lift-off process

Young Ho Do; Min Gyu Kang; Jin Sang Kim; Chong Yun Kang; Seok Jin Yoon

doi:10.1016/j.sna.2012.06.012

Fabrication of flexible device based on PAN-PZT thin films by laser lift-off process

Young Ho Do, Min Gyu Kang, Jin Sang Kim, Chong Yun Kang, Seok Jin Yoon

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

The ferroelectric properties of flexible devices based on 0.05Pb(Al _0.5Nb _0.5)O ₃-0.95Pb(Zr _0.52Ti _0.48)O ₃ + 0.7 wt.%Nb ₂O ₅ + 0.5 wt.%MnO ₂ (PAN-PZT) thin films, which were fabricated using a laser lift-off (LLO) process, were investigated. The flexible devices based on PAN-PZT thin films were coated with a sacrificial layer, which prevented or minimized damage during LLO process. The structural and electrical properties of the PAN-PZT thin films before and after LLO process demonstrated that the crystallographic and ferroelectric properties of the device were retained after LLO process. Flexible devices based on PAN-PZT thin films coated with a sacrificial layer may be fabricated using the LLO process for the production of flexible electronic devices.

Original language	English (US)
Pages (from-to)	124-127
Number of pages	4
Journal	Sensors and Actuators, A: Physical
Volume	184
DOIs	https://doi.org/10.1016/j.sna.2012.06.012
State	Published - Sep 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/j.sna.2012.06.012

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title = "Fabrication of flexible device based on PAN-PZT thin films by laser lift-off process",

abstract = "The ferroelectric properties of flexible devices based on 0.05Pb(Al 0.5Nb 0.5)O 3-0.95Pb(Zr 0.52Ti 0.48)O 3 + 0.7 wt.%Nb 2O 5 + 0.5 wt.%MnO 2 (PAN-PZT) thin films, which were fabricated using a laser lift-off (LLO) process, were investigated. The flexible devices based on PAN-PZT thin films were coated with a sacrificial layer, which prevented or minimized damage during LLO process. The structural and electrical properties of the PAN-PZT thin films before and after LLO process demonstrated that the crystallographic and ferroelectric properties of the device were retained after LLO process. Flexible devices based on PAN-PZT thin films coated with a sacrificial layer may be fabricated using the LLO process for the production of flexible electronic devices.",

author = "Do, {Young Ho} and Kang, {Min Gyu} and Kim, {Jin Sang} and Kang, {Chong Yun} and Yoon, {Seok Jin}",

note = "Funding Information: This research was supported by the Fusion Research Program for Green Technologies through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. 2011-0000001 ) and the institutional research program of Korea Institute of Science and Technology (contract No. 2E22731). ",

year = "2012",

month = sep,

doi = "10.1016/j.sna.2012.06.012",

language = "English (US)",

volume = "184",

pages = "124--127",

journal = "Sensors and Actuators, A: Physical",

issn = "0924-4247",

publisher = "Elsevier B.V.",

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T1 - Fabrication of flexible device based on PAN-PZT thin films by laser lift-off process

AU - Do, Young Ho

AU - Kang, Min Gyu

AU - Kim, Jin Sang

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

N1 - Funding Information: This research was supported by the Fusion Research Program for Green Technologies through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. 2011-0000001 ) and the institutional research program of Korea Institute of Science and Technology (contract No. 2E22731).

PY - 2012/9

Y1 - 2012/9

N2 - The ferroelectric properties of flexible devices based on 0.05Pb(Al 0.5Nb 0.5)O 3-0.95Pb(Zr 0.52Ti 0.48)O 3 + 0.7 wt.%Nb 2O 5 + 0.5 wt.%MnO 2 (PAN-PZT) thin films, which were fabricated using a laser lift-off (LLO) process, were investigated. The flexible devices based on PAN-PZT thin films were coated with a sacrificial layer, which prevented or minimized damage during LLO process. The structural and electrical properties of the PAN-PZT thin films before and after LLO process demonstrated that the crystallographic and ferroelectric properties of the device were retained after LLO process. Flexible devices based on PAN-PZT thin films coated with a sacrificial layer may be fabricated using the LLO process for the production of flexible electronic devices.

AB - The ferroelectric properties of flexible devices based on 0.05Pb(Al 0.5Nb 0.5)O 3-0.95Pb(Zr 0.52Ti 0.48)O 3 + 0.7 wt.%Nb 2O 5 + 0.5 wt.%MnO 2 (PAN-PZT) thin films, which were fabricated using a laser lift-off (LLO) process, were investigated. The flexible devices based on PAN-PZT thin films were coated with a sacrificial layer, which prevented or minimized damage during LLO process. The structural and electrical properties of the PAN-PZT thin films before and after LLO process demonstrated that the crystallographic and ferroelectric properties of the device were retained after LLO process. Flexible devices based on PAN-PZT thin films coated with a sacrificial layer may be fabricated using the LLO process for the production of flexible electronic devices.

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SN - 0924-4247

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EP - 127

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

ER -

Fabrication of flexible device based on PAN-PZT thin films by laser lift-off process

Abstract

All Science Journal Classification (ASJC) codes

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