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Fabrication of MEMS tonpilz transducers
Q. F. Zhou
, L. P. Wang
, G. Gerber
,
R. Meyer
, D. Van Tol
, S. Tadigadapa
, W. J. Hughes
,
S. Trolier-McKinstry
Materials Research Institute (MRI)
Materials Science and Engineering
Nanofabrication Laboratory
Research output
:
Contribution to journal
›
Conference article
›
peer-review
5
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Scopus citations
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Keyphrases
Tonpilz
100%
Tonpilz Transducer
100%
LaNiO3
100%
PZT Film
75%
Silicon-on-insulator
75%
Insulator Substrate
75%
Head Mass
50%
PZT Thick Film
50%
High Output
25%
High Efficiency
25%
Microstructure
25%
Dielectric Properties
25%
Dielectric Permittivity
25%
Ferroelectric Properties
25%
Heat Treatment
25%
Etching Process
25%
P-type
25%
Lead Zirconate Titanate
25%
Piezoelectric Thin Film
25%
Remanent Polarization
25%
Randomly Oriented
25%
Heavy Tails
25%
Dry Etching
25%
MHz Frequency
25%
Volatilization
25%
Bottom Electrode
25%
Room Temperature Resistivity
25%
Sol-gel Process
25%
Bulk Silicon
25%
Wet Etching
25%
Mass-spring System
25%
Screen-printed
25%
Mass-spring
25%
Active Elements
25%
Silver Layer
25%
Output Capability
25%
Metal-organic Decomposition
25%
Silicon Layer
25%
Engineering
Transducer
100%
Microelectromechanical System
100%
Silicon on Insulator
75%
Thin Films
50%
Conductive
50%
Dielectrics
50%
Piezoelectric
50%
Room Temperature
25%
Heat Treatment
25%
Sol-Gel Process
25%
Titanate
25%
Lead Zirconate
25%
Mols
25%
Vaporization
25%
Bulk Silicon
25%
Spring Mass System
25%
Active Element
25%
Silicon Layer
25%
Material Science
Film
100%
Microelectromechanical System
100%
Silicon
66%
Thin Films
33%
Piezoelectricity
33%
Thick Films
33%
Silver
16%
Oxide Compound
16%
Permittivity
16%
Dielectric Property
16%
Ferroelectricity
16%
Sol-Gel
16%
Heat Treatment
16%
Electrical Resistivity
16%
Lead Zirconate Titanate
16%
Dry Etching
16%
Bulk Silicon
16%
Wet Etching
16%