Facet roughness analysis for InGaN/GaN lasers with cleaved facets

D. A. Stocker; E. F. Schubert; W. Grieshaber; K. S. Boutros; J. M. Redwing

doi:10.1063/1.122172

Facet roughness analysis for InGaN/GaN lasers with cleaved facets

D. A. Stocker, E. F. Schubert, W. Grieshaber, K. S. Boutros, J. M. Redwing

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Abstract

Atomic force microscope images reveal a root-mean-square roughness Δd=16nm for InGaN/GaN double-heterostructure laser structures with cleaved a-plane facets. The c-plane sapphire substrate cleaves cleanly along both the a and m planes. A theoretical model is developed which shows that the power reflectivity of the facets decreases with roughness by a factor of e^-16π2(nΔd/λ₀)², where n is the refractive index of the semiconductor and λ₀ is the emission wavelength. Laser emission from the optically pumped cavities shows a TE/TM ratio of 100, an increase in differential quantum efficiency by a factor of 34 above threshold, and an emission line narrowing to 13.5 meV.

Original language	English (US)
Pages (from-to)	1925-1927
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	14
DOIs	https://doi.org/10.1063/1.122172
State	Published - 1998

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.122172

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title = "Facet roughness analysis for InGaN/GaN lasers with cleaved facets",

abstract = "Atomic force microscope images reveal a root-mean-square roughness Δd=16nm for InGaN/GaN double-heterostructure laser structures with cleaved a-plane facets. The c-plane sapphire substrate cleaves cleanly along both the a and m planes. A theoretical model is developed which shows that the power reflectivity of the facets decreases with roughness by a factor of e-16π2(nΔd/λ0)2, where n is the refractive index of the semiconductor and λ0 is the emission wavelength. Laser emission from the optically pumped cavities shows a TE/TM ratio of 100, an increase in differential quantum efficiency by a factor of 34 above threshold, and an emission line narrowing to 13.5 meV.",

author = "Stocker, {D. A.} and Schubert, {E. F.} and W. Grieshaber and Boutros, {K. S.} and Redwing, {J. M.}",

year = "1998",

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T1 - Facet roughness analysis for InGaN/GaN lasers with cleaved facets

AU - Stocker, D. A.

AU - Schubert, E. F.

AU - Grieshaber, W.

AU - Boutros, K. S.

AU - Redwing, J. M.

PY - 1998

Y1 - 1998

N2 - Atomic force microscope images reveal a root-mean-square roughness Δd=16nm for InGaN/GaN double-heterostructure laser structures with cleaved a-plane facets. The c-plane sapphire substrate cleaves cleanly along both the a and m planes. A theoretical model is developed which shows that the power reflectivity of the facets decreases with roughness by a factor of e-16π2(nΔd/λ0)2, where n is the refractive index of the semiconductor and λ0 is the emission wavelength. Laser emission from the optically pumped cavities shows a TE/TM ratio of 100, an increase in differential quantum efficiency by a factor of 34 above threshold, and an emission line narrowing to 13.5 meV.

AB - Atomic force microscope images reveal a root-mean-square roughness Δd=16nm for InGaN/GaN double-heterostructure laser structures with cleaved a-plane facets. The c-plane sapphire substrate cleaves cleanly along both the a and m planes. A theoretical model is developed which shows that the power reflectivity of the facets decreases with roughness by a factor of e-16π2(nΔd/λ0)2, where n is the refractive index of the semiconductor and λ0 is the emission wavelength. Laser emission from the optically pumped cavities shows a TE/TM ratio of 100, an increase in differential quantum efficiency by a factor of 34 above threshold, and an emission line narrowing to 13.5 meV.

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JO - Applied Physics Letters

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Facet roughness analysis for InGaN/GaN lasers with cleaved facets

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