Facet roughness analysis for InGaN/GaN lasers with cleaved facets

D. A. Stocker; E. F. Schubert; W. Grieshaber; K. S. Boutros; J. M. Redwing

doi:10.1063/1.122172

Facet roughness analysis for InGaN/GaN lasers with cleaved facets

D. A. Stocker
, E. F. Schubert
, W. Grieshaber
, K. S. Boutros
, J. M. Redwing

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Atomic force microscope images reveal a root-mean-square roughness Δd=16nm for InGaN/GaN double-heterostructure laser structures with cleaved a-plane facets. The c-plane sapphire substrate cleaves cleanly along both the a and m planes. A theoretical model is developed which shows that the power reflectivity of the facets decreases with roughness by a factor of e^-16π2(nΔd/λ₀)², where n is the refractive index of the semiconductor and λ₀ is the emission wavelength. Laser emission from the optically pumped cavities shows a TE/TM ratio of 100, an increase in differential quantum efficiency by a factor of 34 above threshold, and an emission line narrowing to 13.5 meV.

Original language	English (US)
Pages (from-to)	1925-1927
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	14
DOIs	https://doi.org/10.1063/1.122172
State	Published - 1998

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.122172

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title = "Facet roughness analysis for InGaN/GaN lasers with cleaved facets",

abstract = "Atomic force microscope images reveal a root-mean-square roughness Δd=16nm for InGaN/GaN double-heterostructure laser structures with cleaved a-plane facets. The c-plane sapphire substrate cleaves cleanly along both the a and m planes. A theoretical model is developed which shows that the power reflectivity of the facets decreases with roughness by a factor of e-16π2(nΔd/λ0)2, where n is the refractive index of the semiconductor and λ0 is the emission wavelength. Laser emission from the optically pumped cavities shows a TE/TM ratio of 100, an increase in differential quantum efficiency by a factor of 34 above threshold, and an emission line narrowing to 13.5 meV.",

author = "Stocker, \{D. A.\} and Schubert, \{E. F.\} and W. Grieshaber and Boutros, \{K. S.\} and Redwing, \{J. M.\}",

year = "1998",

doi = "10.1063/1.122172",

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volume = "73",

pages = "1925--1927",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Facet roughness analysis for InGaN/GaN lasers with cleaved facets

AU - Stocker, D. A.

AU - Schubert, E. F.

AU - Grieshaber, W.

AU - Boutros, K. S.

AU - Redwing, J. M.

PY - 1998

Y1 - 1998

N2 - Atomic force microscope images reveal a root-mean-square roughness Δd=16nm for InGaN/GaN double-heterostructure laser structures with cleaved a-plane facets. The c-plane sapphire substrate cleaves cleanly along both the a and m planes. A theoretical model is developed which shows that the power reflectivity of the facets decreases with roughness by a factor of e-16π2(nΔd/λ0)2, where n is the refractive index of the semiconductor and λ0 is the emission wavelength. Laser emission from the optically pumped cavities shows a TE/TM ratio of 100, an increase in differential quantum efficiency by a factor of 34 above threshold, and an emission line narrowing to 13.5 meV.

AB - Atomic force microscope images reveal a root-mean-square roughness Δd=16nm for InGaN/GaN double-heterostructure laser structures with cleaved a-plane facets. The c-plane sapphire substrate cleaves cleanly along both the a and m planes. A theoretical model is developed which shows that the power reflectivity of the facets decreases with roughness by a factor of e-16π2(nΔd/λ0)2, where n is the refractive index of the semiconductor and λ0 is the emission wavelength. Laser emission from the optically pumped cavities shows a TE/TM ratio of 100, an increase in differential quantum efficiency by a factor of 34 above threshold, and an emission line narrowing to 13.5 meV.

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DO - 10.1063/1.122172

M3 - Article

AN - SCOPUS:0032487215

SN - 0003-6951

VL - 73

SP - 1925

EP - 1927

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Facet roughness analysis for InGaN/GaN lasers with cleaved facets

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