Abstract
This brief proposes a fully-concurrent access SRAM topology to handle high-concurrency operations on multiple rows in an SRAM array. Such high-concurrency operations are widely seen in both conventional and emerging applications where high parallelism is preferred, e.g., the table update in a database and the parallel feature update in graph computing. The proposed shift-based parallel access and compute architecture is enabled by integrating the shifter function into each SRAM cell, and by creating a datapath that exploits the high-parallelism of shift operations in multiple rows. An example of a 128-row 16-column shiftable SRAM in 65nm CMOS is designed. Post-layout SPICE simulations show improvements of 5.5x energy efficiency and 27.2x speed in average over a conventional digital near-memory computing scheme. In addition, the design has been fabricated and the measurement results show support of up to 800MHz clock at 1.0V and 1.2GHz at 1.2V.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1605-1609 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Circuits and Systems II: Express Briefs |
| Volume | 70 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 1 2023 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
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