FAST: A Fully-Concurrent Access SRAM Topology for High Row-Wise Parallelism Applications Based on Dynamic Shift Operations

Yiming Chen, Yushen Fu, Mingyen Lee, Sumitha George, Yongpan Liu, Vijaykrishnan Narayanan, Huazhong Yang, Xueqing Li

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

This brief proposes a fully-concurrent access SRAM topology to handle high-concurrency operations on multiple rows in an SRAM array. Such high-concurrency operations are widely seen in both conventional and emerging applications where high parallelism is preferred, e.g., the table update in a database and the parallel feature update in graph computing. The proposed shift-based parallel access and compute architecture is enabled by integrating the shifter function into each SRAM cell, and by creating a datapath that exploits the high-parallelism of shift operations in multiple rows. An example of a 128-row 16-column shiftable SRAM in 65nm CMOS is designed. Post-layout SPICE simulations show improvements of 5.5x energy efficiency and 27.2x speed in average over a conventional digital near-memory computing scheme. In addition, the design has been fabricated and the measurement results show support of up to 800MHz clock at 1.0V and 1.2GHz at 1.2V.

Original languageEnglish (US)
Pages (from-to)1605-1609
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume70
Issue number4
DOIs
StatePublished - Apr 1 2023

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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