Fast flexible plastic substrate ZnO circuits

Dalong Zhao; Devin A. Mourey; Thomas N. Jackson

doi:10.1109/LED.2010.2041321

Fast flexible plastic substrate ZnO circuits

Dalong Zhao, Devin A. Mourey, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

We report thin-film transistors (TFTs) and circuits fabricated on flexible plastic substrates using ZnO thin films deposited by plasma-enhanced atomic layer deposition at 200 °C. Crossover test structures fabricated on flexible substrates have a good yield, and ZnO TFTs have a field-effect mobility of 20 cm²/V.s. The 15-stage ring oscillators are operated at > 2 MHz with a supply voltage of V_DD = 18 V, corresponding to a propagation delay of < 20 ns/stage. To the best of our knowledge, these are the fastest oxide-semiconductor circuits on flexible substrates reported to date.

Original language	English (US)
Article number	25
Pages (from-to)	323-325
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	4
DOIs	https://doi.org/10.1109/LED.2010.2041321
State	Published - Apr 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2010.2041321

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AB - We report thin-film transistors (TFTs) and circuits fabricated on flexible plastic substrates using ZnO thin films deposited by plasma-enhanced atomic layer deposition at 200 °C. Crossover test structures fabricated on flexible substrates have a good yield, and ZnO TFTs have a field-effect mobility of 20 cm2/V.s. The 15-stage ring oscillators are operated at > 2 MHz with a supply voltage of VDD = 18 V, corresponding to a propagation delay of < 20 ns/stage. To the best of our knowledge, these are the fastest oxide-semiconductor circuits on flexible substrates reported to date.

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Fast flexible plastic substrate ZnO circuits

Abstract

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