Fast PEALD ZnO thin-film transistor circuits

Devin A. Mourey, Dalong A. Zhao, Jie Sun, Thomas N. Jackson

Research output: Contribution to journalArticlepeer-review

87 Scopus citations


We report stable high-mobility ZnO thin-film transistors (TFTs) and fast circuits fabricated using a novel weak reactant plasma-enhanced atomic layer deposition (PEALD) process. This PEALD process is a highly scalable manufacturable process and is a faster and simpler alternative to conventional atomic layer deposition. Using PEALD, we have deposited highly crystalline (002) textured ZnO thin films at a low temperature (200°C). Using PEALD ZnO films, we have fabricated high-mobility TFTs (2030 cm2/V·s), which have <100-mV threshold voltage shifts after bias stress at 80°C for 20000 s. Using these high-performance TFTs, we have also fabricated simple 15-stage ring oscillator circuits with a propagation delay of 22 ns/stage for a supply voltage of 16 V, which, to the best of our knowledge, are the fastest ZnO TFT circuits reported to date.

Original languageEnglish (US)
Article number5353711
Pages (from-to)530-534
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number2
StatePublished - Feb 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Fast PEALD ZnO thin-film transistor circuits'. Together they form a unique fingerprint.

Cite this