Abstract
We report stable high-mobility ZnO thin-film transistors (TFTs) and fast circuits fabricated using a novel weak reactant plasma-enhanced atomic layer deposition (PEALD) process. This PEALD process is a highly scalable manufacturable process and is a faster and simpler alternative to conventional atomic layer deposition. Using PEALD, we have deposited highly crystalline (002) textured ZnO thin films at a low temperature (200°C). Using PEALD ZnO films, we have fabricated high-mobility TFTs (2030 cm2/V·s), which have <100-mV threshold voltage shifts after bias stress at 80°C for 20000 s. Using these high-performance TFTs, we have also fabricated simple 15-stage ring oscillator circuits with a propagation delay of 22 ns/stage for a supply voltage of 16 V, which, to the best of our knowledge, are the fastest ZnO TFT circuits reported to date.
Original language | English (US) |
---|---|
Article number | 5353711 |
Pages (from-to) | 530-534 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 57 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2010 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering