Fast switching protocol for ferroelectric random access memory based on poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films

Ying Hou; Zhaoyue Lü; Tiansong Pu; Yuan Zhang; Guoqiang Xu; Haisheng Xu

doi:10.1063/1.4792689

Fast switching protocol for ferroelectric random access memory based on poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films

Ying Hou, Zhaoyue Lü, Tiansong Pu, Yuan Zhang, Guoqiang Xu, Haisheng Xu

Penn State University Park

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The polarization switching behaviors with different pulse processes for ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer ultrathin films have been studied. The faster switching speed with imprint time is observed for the films with the certain switching and imprint directions. The internal electric fields for these processes are well analyzed, and it is found that the effective fields as well as charge trap states in ferroelectric layers are strongly responsible for the switching behaviors. This result provides an effective route to design the optimum protocol for ferroelectric random access memory based on P(VDF-TrFE) copolymer ultrathin film.

Original language	English (US)
Article number	063507
Journal	Applied Physics Letters
Volume	102
Issue number	6
DOIs	https://doi.org/10.1063/1.4792689
State	Published - Feb 11 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4792689

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@article{274a341394394d7eb8d044330daf010e,

title = "Fast switching protocol for ferroelectric random access memory based on poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films",

abstract = "The polarization switching behaviors with different pulse processes for ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer ultrathin films have been studied. The faster switching speed with imprint time is observed for the films with the certain switching and imprint directions. The internal electric fields for these processes are well analyzed, and it is found that the effective fields as well as charge trap states in ferroelectric layers are strongly responsible for the switching behaviors. This result provides an effective route to design the optimum protocol for ferroelectric random access memory based on P(VDF-TrFE) copolymer ultrathin film.",

author = "Ying Hou and Zhaoyue L{\"u} and Tiansong Pu and Yuan Zhang and Guoqiang Xu and Haisheng Xu",

note = "Funding Information: This work is supported by the National Natural Science Foundation of China (Contract No. 91123034).",

year = "2013",

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doi = "10.1063/1.4792689",

language = "English (US)",

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T1 - Fast switching protocol for ferroelectric random access memory based on poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films

AU - Hou, Ying

AU - Lü, Zhaoyue

AU - Pu, Tiansong

AU - Zhang, Yuan

AU - Xu, Guoqiang

AU - Xu, Haisheng

N1 - Funding Information: This work is supported by the National Natural Science Foundation of China (Contract No. 91123034).

PY - 2013/2/11

Y1 - 2013/2/11

N2 - The polarization switching behaviors with different pulse processes for ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer ultrathin films have been studied. The faster switching speed with imprint time is observed for the films with the certain switching and imprint directions. The internal electric fields for these processes are well analyzed, and it is found that the effective fields as well as charge trap states in ferroelectric layers are strongly responsible for the switching behaviors. This result provides an effective route to design the optimum protocol for ferroelectric random access memory based on P(VDF-TrFE) copolymer ultrathin film.

AB - The polarization switching behaviors with different pulse processes for ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer ultrathin films have been studied. The faster switching speed with imprint time is observed for the films with the certain switching and imprint directions. The internal electric fields for these processes are well analyzed, and it is found that the effective fields as well as charge trap states in ferroelectric layers are strongly responsible for the switching behaviors. This result provides an effective route to design the optimum protocol for ferroelectric random access memory based on P(VDF-TrFE) copolymer ultrathin film.

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Fast switching protocol for ferroelectric random access memory based on poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films

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