FDFD modeling of signal paths with TSVs in silicon interposer

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10 Scopus citations

Abstract

This paper proposes an efficient method to model signal paths with through-silicon vias (TSVs) in silicon interposer for 3-D systems. The proposed method utilizes 3-D finite-difference frequency-domain (FDFD) method to model the redistribution layer transmission lines to capture the parasitic effects of multiple transmission lines on lossy silicon interposer. TSVs are modeled using an integral equation based solver, which uses cylindrical modal basis functions. A new formulation on incorporating multiport network into 3-D FDFD formulation is presented to include the parasitic effects of TSV arrays into the system matrix. The overall matrix is divided into several subdomains and solved by a divide-and-conquer approach in a parallel manner. The accuracy and efficiency of the proposed method are validated by comparing with 3-D full-wave simulations.

Original languageEnglish (US)
Article number6727465
Pages (from-to)708-717
Number of pages10
JournalIEEE Transactions on Components, Packaging and Manufacturing Technology
Volume4
Issue number4
DOIs
StatePublished - Apr 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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