Feasibility study of directed self-assembly of semiconductor quantum dots

Lawrence H. Friedman, Jian Xu

Research output: Contribution to conferencePaperpeer-review

Abstract

Strain mismatched semiconductors are used to form Self-Assembled Quantum Dots (SAQDs). An important step in developing SAQD technology is to control randomness and disorder in SAQD arrays. There is usually both spatial and size disorder. Here, it is proposed to use spatially varying heating as a method to direct self-assembly and create more ordered SAQD arrays or to control placement of single dots or dot clusters. The feasibility of this approach is demonstrated using a 2D computational model of Ge dots grown in Si based on finite element analysis of surface diffusion and linear elasticity.

Original languageEnglish (US)
Pages149-150
Number of pages2
StatePublished - 2006
Event2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA, United States
Duration: May 7 2006May 11 2006

Other

Other2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Country/TerritoryUnited States
CityBoston, MA
Period5/7/065/11/06

All Science Journal Classification (ASJC) codes

  • General Engineering

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