Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2 O3

A. Ali; H. S. Madan; A. P. Kirk; D. A. Zhao; D. A. Mourey; M. K. Hudait; R. M. Wallace; T. N. Jackson; B. R. Bennett; J. B. Boos; S. Datta

doi:10.1063/1.3492847

Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al₂ O₃

A. Ali
, H. S. Madan
, A. P. Kirk
, D. A. Zhao
, D. A. Mourey
, M. K. Hudait
, R. M. Wallace
, T. N. Jackson
, B. R. Bennett
, J. B. Boos
, S. Datta

Research output: Contribution to journal › Article › peer-review

113 Scopus citations

Abstract

N-type and p-type GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) and plasma-enhanced-ALD (PEALD) Al₂ O₃ dielectrics are studied to identify the optimum surface preparation and oxide deposition conditions for a high quality oxide-semiconductor interface. The ALD Al₂ O₃ /GaSb MOSCAPs exhibit strongly pinned C-V characteristics with high interface state density (Dit) whereas the PEALD Al₂ O₃ /GaSb MOSCAPs show unpinned C-V characteristics (low Dit). The reduction in Sb₂ O ₃ to metallic Sb is suppressed for the PEALD samples due to lower process temperature, identified by x-ray photoelectron spectroscopy analysis. Absence of elemental Sb is attributed to unpinning of Fermi level at the PEALD Al₂ O₃ /GaSb interface.

Original language	English (US)
Article number	143502
Journal	Applied Physics Letters
Volume	97
Issue number	14
DOIs	https://doi.org/10.1063/1.3492847
State	Published - Oct 4 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3492847

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@article{27890b52d8fd4a06a047f59f42f1cfa2,

title = "Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2 O3",

abstract = "N-type and p-type GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) and plasma-enhanced-ALD (PEALD) Al2 O3 dielectrics are studied to identify the optimum surface preparation and oxide deposition conditions for a high quality oxide-semiconductor interface. The ALD Al2 O3 /GaSb MOSCAPs exhibit strongly pinned C-V characteristics with high interface state density (Dit) whereas the PEALD Al2 O3 /GaSb MOSCAPs show unpinned C-V characteristics (low Dit). The reduction in Sb2 O 3 to metallic Sb is suppressed for the PEALD samples due to lower process temperature, identified by x-ray photoelectron spectroscopy analysis. Absence of elemental Sb is attributed to unpinning of Fermi level at the PEALD Al2 O3 /GaSb interface.",

author = "A. Ali and Madan, \{H. S.\} and Kirk, \{A. P.\} and Zhao, \{D. A.\} and Mourey, \{D. A.\} and Hudait, \{M. K.\} and Wallace, \{R. M.\} and Jackson, \{T. N.\} and Bennett, \{B. R.\} and Boos, \{J. B.\} and S. Datta",

note = "Funding Information: Some of the authors gratefully acknowledge the financial support from the FCRP for Materials, Structures, and Devices (MSD) sponsored by the SRC and DARPA.",

year = "2010",

month = oct,

day = "4",

doi = "10.1063/1.3492847",

language = "English (US)",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

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T1 - Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2 O3

AU - Ali, A.

AU - Madan, H. S.

AU - Kirk, A. P.

AU - Zhao, D. A.

AU - Mourey, D. A.

AU - Hudait, M. K.

AU - Wallace, R. M.

AU - Jackson, T. N.

AU - Bennett, B. R.

AU - Boos, J. B.

AU - Datta, S.

N1 - Funding Information: Some of the authors gratefully acknowledge the financial support from the FCRP for Materials, Structures, and Devices (MSD) sponsored by the SRC and DARPA.

PY - 2010/10/4

Y1 - 2010/10/4

N2 - N-type and p-type GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) and plasma-enhanced-ALD (PEALD) Al2 O3 dielectrics are studied to identify the optimum surface preparation and oxide deposition conditions for a high quality oxide-semiconductor interface. The ALD Al2 O3 /GaSb MOSCAPs exhibit strongly pinned C-V characteristics with high interface state density (Dit) whereas the PEALD Al2 O3 /GaSb MOSCAPs show unpinned C-V characteristics (low Dit). The reduction in Sb2 O 3 to metallic Sb is suppressed for the PEALD samples due to lower process temperature, identified by x-ray photoelectron spectroscopy analysis. Absence of elemental Sb is attributed to unpinning of Fermi level at the PEALD Al2 O3 /GaSb interface.

AB - N-type and p-type GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) and plasma-enhanced-ALD (PEALD) Al2 O3 dielectrics are studied to identify the optimum surface preparation and oxide deposition conditions for a high quality oxide-semiconductor interface. The ALD Al2 O3 /GaSb MOSCAPs exhibit strongly pinned C-V characteristics with high interface state density (Dit) whereas the PEALD Al2 O3 /GaSb MOSCAPs show unpinned C-V characteristics (low Dit). The reduction in Sb2 O 3 to metallic Sb is suppressed for the PEALD samples due to lower process temperature, identified by x-ray photoelectron spectroscopy analysis. Absence of elemental Sb is attributed to unpinning of Fermi level at the PEALD Al2 O3 /GaSb interface.

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SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143502

ER -

Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al₂ O₃

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