Fermi level unpinning of GaSb(100) using plasma enhanced ALD Al 2O3 dielectric

A. Ali; H. S. Madan; A. P. Kirk; R. M. Wallace; D. A. Zhao; D. A. Mourey; M. Hudait; Thomas Nelson Jackson; B. R. Bennett; J. B. Boos; S. Datta

doi:10.1109/DRC.2010.5551954

Fermi level unpinning of GaSb(100) using plasma enhanced ALD Al ₂O₃ dielectric

A. Ali, H. S. Madan, A. P. Kirk, R. M. Wallace, D. A. Zhao, D. A. Mourey, M. Hudait, Thomas Nelson Jackson, B. R. Bennett, J. B. Boos, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Antimonide based compound semiconductors have gained considerable interest in recent years due to their superior electron and hole transport properties [1-3]. Among the various high mobility material systems (Fig. 1), arsenic-antimonide based MOS-HEMTs have great potential to enable complementary logic operation at low supply voltage. Integrating a high quality dielectric is key to demonstrating a scalable arsenic-antimonide MOS-HEMT architecture for 15 nm logic technology node and beyond. It is hypothesized that an ultra-thin GaSb surface layer is more favorable toward high-Κ integration than In _0.2Al_0.8Sb barrier as it avoids Al at the interface and the associated surface oxidation. Here, we study the effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and the surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al₂O₃ dielectric. We demonstrate for the first time, unpinned Fermi level in GaSb MOS system with high-Κ PEALD Al₂O₃ dielectric using admittance spectroscopy and XPS analysis.

Original language	English (US)
Title of host publication	68th Device Research Conference, DRC 2010
Pages	27-28
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2010.5551954
State	Published - 2010
Event	68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States Duration: Jun 21 2010 → Jun 23 2010

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	68th Device Research Conference, DRC 2010
Country/Territory	United States
City	Notre Dame, IN
Period	6/21/10 → 6/23/10

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2010.5551954

Cite this

Ali, A., Madan, H. S., Kirk, A. P., Wallace, R. M., Zhao, D. A., Mourey, D. A., Hudait, M., Jackson, T. N., Bennett, B. R., Boos, J. B., & Datta, S. (2010). Fermi level unpinning of GaSb(100) using plasma enhanced ALD Al ₂O₃ dielectric. In 68th Device Research Conference, DRC 2010 (pp. 27-28). Article 5551954 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2010.5551954

@inproceedings{25a41419cd104cca9f4bffe2aeeff5a3,

title = "Fermi level unpinning of GaSb(100) using plasma enhanced ALD Al 2O3 dielectric",

abstract = "Antimonide based compound semiconductors have gained considerable interest in recent years due to their superior electron and hole transport properties [1-3]. Among the various high mobility material systems (Fig. 1), arsenic-antimonide based MOS-HEMTs have great potential to enable complementary logic operation at low supply voltage. Integrating a high quality dielectric is key to demonstrating a scalable arsenic-antimonide MOS-HEMT architecture for 15 nm logic technology node and beyond. It is hypothesized that an ultra-thin GaSb surface layer is more favorable toward high-Κ integration than In 0.2Al0.8Sb barrier as it avoids Al at the interface and the associated surface oxidation. Here, we study the effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and the surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al2O3 dielectric. We demonstrate for the first time, unpinned Fermi level in GaSb MOS system with high-Κ PEALD Al2O3 dielectric using admittance spectroscopy and XPS analysis.",

author = "A. Ali and Madan, {H. S.} and Kirk, {A. P.} and Wallace, {R. M.} and Zhao, {D. A.} and Mourey, {D. A.} and M. Hudait and Jackson, {Thomas Nelson} and Bennett, {B. R.} and Boos, {J. B.} and S. Datta",

year = "2010",

doi = "10.1109/DRC.2010.5551954",

language = "English (US)",

isbn = "9781424478705",

series = "Device Research Conference - Conference Digest, DRC",

pages = "27--28",

booktitle = "68th Device Research Conference, DRC 2010",

note = "68th Device Research Conference, DRC 2010 ; Conference date: 21-06-2010 Through 23-06-2010",

}

Ali, A, Madan, HS, Kirk, AP, Wallace, RM, Zhao, DA, Mourey, DA, Hudait, M, Jackson, TN, Bennett, BR, Boos, JB & Datta, S 2010, Fermi level unpinning of GaSb(100) using plasma enhanced ALD Al ₂O₃ dielectric. in 68th Device Research Conference, DRC 2010., 5551954, Device Research Conference - Conference Digest, DRC, pp. 27-28, 68th Device Research Conference, DRC 2010, Notre Dame, IN, United States, 6/21/10. https://doi.org/10.1109/DRC.2010.5551954

TY - GEN

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AU - Ali, A.

AU - Madan, H. S.

AU - Kirk, A. P.

AU - Wallace, R. M.

AU - Zhao, D. A.

AU - Mourey, D. A.

AU - Hudait, M.

AU - Jackson, Thomas Nelson

AU - Bennett, B. R.

AU - Boos, J. B.

AU - Datta, S.

PY - 2010

Y1 - 2010

N2 - Antimonide based compound semiconductors have gained considerable interest in recent years due to their superior electron and hole transport properties [1-3]. Among the various high mobility material systems (Fig. 1), arsenic-antimonide based MOS-HEMTs have great potential to enable complementary logic operation at low supply voltage. Integrating a high quality dielectric is key to demonstrating a scalable arsenic-antimonide MOS-HEMT architecture for 15 nm logic technology node and beyond. It is hypothesized that an ultra-thin GaSb surface layer is more favorable toward high-Κ integration than In 0.2Al0.8Sb barrier as it avoids Al at the interface and the associated surface oxidation. Here, we study the effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and the surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al2O3 dielectric. We demonstrate for the first time, unpinned Fermi level in GaSb MOS system with high-Κ PEALD Al2O3 dielectric using admittance spectroscopy and XPS analysis.

AB - Antimonide based compound semiconductors have gained considerable interest in recent years due to their superior electron and hole transport properties [1-3]. Among the various high mobility material systems (Fig. 1), arsenic-antimonide based MOS-HEMTs have great potential to enable complementary logic operation at low supply voltage. Integrating a high quality dielectric is key to demonstrating a scalable arsenic-antimonide MOS-HEMT architecture for 15 nm logic technology node and beyond. It is hypothesized that an ultra-thin GaSb surface layer is more favorable toward high-Κ integration than In 0.2Al0.8Sb barrier as it avoids Al at the interface and the associated surface oxidation. Here, we study the effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and the surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al2O3 dielectric. We demonstrate for the first time, unpinned Fermi level in GaSb MOS system with high-Κ PEALD Al2O3 dielectric using admittance spectroscopy and XPS analysis.

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M3 - Conference contribution

AN - SCOPUS:77957595744

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T3 - Device Research Conference - Conference Digest, DRC

SP - 27

EP - 28

BT - 68th Device Research Conference, DRC 2010

T2 - 68th Device Research Conference, DRC 2010

Y2 - 21 June 2010 through 23 June 2010

ER -