Fermi-level unpinning of HfO2/In0.53Ga 0.47As gate stacks using hydrogen anneals

Y. Hwang; R. Engel-Herbert; N. G. Rudawski; S. Stemmer

doi:10.1149/1.3481598

Fermi-level unpinning of HfO₂/In_0.53Ga _0.47As gate stacks using hydrogen anneals

Y. Hwang, R. Engel-Herbert, N. G. Rudawski, S. Stemmer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

The electrical properties of Pt/HfO₂/In_0.53Ga _0.47As metal oxide semiconductor capacitors were studied as a function of post-deposition annealing conditions and analyzed using the conductance and Terman methods. Forming gas annealed gate stack exhibit an unpinned Fermi level while nitrogen annealed stacks are effectively pinned at midgap.

Original language	English (US)
Title of host publication	Physics and Technology of High-k Materials 8
Publisher	Electrochemical Society Inc.
Pages	117-121
Number of pages	5
Edition	3
ISBN (Electronic)	9781607681724
ISBN (Print)	9781566778220
DOIs	https://doi.org/10.1149/1.3481598
State	Published - 2010

Publication series

Name	ECS Transactions
Number	3
Volume	33
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/1.3481598

Cite this

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title = "Fermi-level unpinning of HfO2/In0.53Ga 0.47As gate stacks using hydrogen anneals",

abstract = "The electrical properties of Pt/HfO2/In0.53Ga 0.47As metal oxide semiconductor capacitors were studied as a function of post-deposition annealing conditions and analyzed using the conductance and Terman methods. Forming gas annealed gate stack exhibit an unpinned Fermi level while nitrogen annealed stacks are effectively pinned at midgap.",

author = "Y. Hwang and R. Engel-Herbert and Rudawski, \{N. G.\} and S. Stemmer",

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AU - Rudawski, N. G.

AU - Stemmer, S.

PY - 2010

Y1 - 2010

N2 - The electrical properties of Pt/HfO2/In0.53Ga 0.47As metal oxide semiconductor capacitors were studied as a function of post-deposition annealing conditions and analyzed using the conductance and Terman methods. Forming gas annealed gate stack exhibit an unpinned Fermi level while nitrogen annealed stacks are effectively pinned at midgap.

AB - The electrical properties of Pt/HfO2/In0.53Ga 0.47As metal oxide semiconductor capacitors were studied as a function of post-deposition annealing conditions and analyzed using the conductance and Terman methods. Forming gas annealed gate stack exhibit an unpinned Fermi level while nitrogen annealed stacks are effectively pinned at midgap.

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DO - 10.1149/1.3481598

M3 - Conference contribution

AN - SCOPUS:79952660550

SN - 9781566778220

T3 - ECS Transactions

SP - 117

EP - 121

BT - Physics and Technology of High-k Materials 8

PB - Electrochemical Society Inc.

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