Ferroelastic domain switching dynamics under electrical and mechanical excitations

Peng Gao; Jason Britson; Christopher T. Nelson; Jacob R. Jokisaari; Chen Duan; Morgan Trassin; Seung Hyub Baek; Hua Guo; Linze Li; Yiran Wang; Ying Hao Chu; Andrew M. Minor; Chang Beom Eom; Ramamoorthy Ramesh; Long Qing Chen; Xiaoqing Pan

doi:10.1038/ncomms4801

Ferroelastic domain switching dynamics under electrical and mechanical excitations

Peng Gao, Jason Britson, Christopher T. Nelson, Jacob R. Jokisaari, Chen Duan, Morgan Trassin, Seung Hyub Baek, Hua Guo, Linze Li, Yiran Wang, Ying Hao Chu, Andrew M. Minor, Chang Beom Eom, Ramamoorthy Ramesh, Long Qing Chen, Xiaoqing Pan

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145 Scopus citations

Abstract

In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the switching dynamics of individual ferroelastic domains in thin Pb(Zr_0.2,Ti_0.8)O₃ films under electrical and mechanical excitations by using in situ transmission electron microscopy and phase-field modelling. We find that ferroelastic domains can be effectively and permanently stabilized by dislocations at the substrate interface while similar domains at free surfaces without pinning dislocations can be removed by either electric or stress fields. For both electrical and mechanical switching, ferroelastic switching is found to occur most readily at the highly active needle points in ferroelastic domains. Our results provide new insights into the understanding of polarization switching dynamics as well as the engineering of ferroelectric devices.

Original language	English (US)
Article number	3801
Journal	Nature communications
Volume	5
DOIs	https://doi.org/10.1038/ncomms4801
State	Published - May 2 2014

All Science Journal Classification (ASJC) codes

General Chemistry
General Biochemistry, Genetics and Molecular Biology
General Physics and Astronomy

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10.1038/ncomms4801

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@article{61759014f5d64af4b122be9169fde4ed,

title = "Ferroelastic domain switching dynamics under electrical and mechanical excitations",

abstract = "In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the switching dynamics of individual ferroelastic domains in thin Pb(Zr0.2,Ti0.8)O3 films under electrical and mechanical excitations by using in situ transmission electron microscopy and phase-field modelling. We find that ferroelastic domains can be effectively and permanently stabilized by dislocations at the substrate interface while similar domains at free surfaces without pinning dislocations can be removed by either electric or stress fields. For both electrical and mechanical switching, ferroelastic switching is found to occur most readily at the highly active needle points in ferroelastic domains. Our results provide new insights into the understanding of polarization switching dynamics as well as the engineering of ferroelectric devices.",

author = "Peng Gao and Jason Britson and Nelson, {Christopher T.} and Jokisaari, {Jacob R.} and Chen Duan and Morgan Trassin and Baek, {Seung Hyub} and Hua Guo and Linze Li and Yiran Wang and Chu, {Ying Hao} and Minor, {Andrew M.} and Eom, {Chang Beom} and Ramamoorthy Ramesh and Chen, {Long Qing} and Xiaoqing Pan",

note = "Funding Information: The work at the University of Michigan was supported by the Department of Energy (DOE) under the Grant DE-FG02-07ER46416 and partially by the National Science Foundation under Grants DMR-0820404 (J.R.J.) and DMR/MRI-0723032 (TEM instrument). The work at University of Wisconsin-Madison was supported by the Army Research Office under Grant number W911NF-10-1-0362. The work at Penn State University was supported by the DOE under the Grant DE-FG02-07ER46417 and partially by the NSF through Grants DMR-0820404 and DMR-1210588 (C.D.). We also acknowledge the National Center for Electron Microscopy at Lawrence Berkeley National Laboratory for their support under the DOE Grant DE-AC02-05CH11231 for user facilities.",

year = "2014",

month = may,

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doi = "10.1038/ncomms4801",

language = "English (US)",

volume = "5",

journal = "Nature communications",

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T1 - Ferroelastic domain switching dynamics under electrical and mechanical excitations

AU - Gao, Peng

AU - Britson, Jason

AU - Nelson, Christopher T.

AU - Jokisaari, Jacob R.

AU - Duan, Chen

AU - Trassin, Morgan

AU - Baek, Seung Hyub

AU - Guo, Hua

AU - Li, Linze

AU - Wang, Yiran

AU - Chu, Ying Hao

AU - Minor, Andrew M.

AU - Eom, Chang Beom

AU - Ramesh, Ramamoorthy

AU - Chen, Long Qing

AU - Pan, Xiaoqing

N1 - Funding Information: The work at the University of Michigan was supported by the Department of Energy (DOE) under the Grant DE-FG02-07ER46416 and partially by the National Science Foundation under Grants DMR-0820404 (J.R.J.) and DMR/MRI-0723032 (TEM instrument). The work at University of Wisconsin-Madison was supported by the Army Research Office under Grant number W911NF-10-1-0362. The work at Penn State University was supported by the DOE under the Grant DE-FG02-07ER46417 and partially by the NSF through Grants DMR-0820404 and DMR-1210588 (C.D.). We also acknowledge the National Center for Electron Microscopy at Lawrence Berkeley National Laboratory for their support under the DOE Grant DE-AC02-05CH11231 for user facilities.

PY - 2014/5/2

Y1 - 2014/5/2

N2 - In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the switching dynamics of individual ferroelastic domains in thin Pb(Zr0.2,Ti0.8)O3 films under electrical and mechanical excitations by using in situ transmission electron microscopy and phase-field modelling. We find that ferroelastic domains can be effectively and permanently stabilized by dislocations at the substrate interface while similar domains at free surfaces without pinning dislocations can be removed by either electric or stress fields. For both electrical and mechanical switching, ferroelastic switching is found to occur most readily at the highly active needle points in ferroelastic domains. Our results provide new insights into the understanding of polarization switching dynamics as well as the engineering of ferroelectric devices.

AB - In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the switching dynamics of individual ferroelastic domains in thin Pb(Zr0.2,Ti0.8)O3 films under electrical and mechanical excitations by using in situ transmission electron microscopy and phase-field modelling. We find that ferroelastic domains can be effectively and permanently stabilized by dislocations at the substrate interface while similar domains at free surfaces without pinning dislocations can be removed by either electric or stress fields. For both electrical and mechanical switching, ferroelastic switching is found to occur most readily at the highly active needle points in ferroelastic domains. Our results provide new insights into the understanding of polarization switching dynamics as well as the engineering of ferroelectric devices.

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JO - Nature communications

JF - Nature communications

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ER -

Ferroelastic domain switching dynamics under electrical and mechanical excitations

Abstract

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