Ferroelectric Al1−xBxN-GaN heterostructures

Joseph Casamento, Fan He, Chloe Skidmore, John Hayden, Josh Nordlander, Joan M. Redwing, Susan Trolier-McKinstry, Jon Paul Maria

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Abstract

This report demonstrates Al0.93B0.7N thin films grown epitaxially on n-type GaN (0002)/c-plane sapphire substrates by reactive magnetron sputtering at 300 °C. At 200 nm film thickness, the Al0.93B0.07N layers exhibit partially relaxed substrate-induced epitaxial strain, a 0.16° wide (0002) rocking curve, in-plane crystallographic registry, and sub-nanometer surface roughness. Electrically, the stack shows robust hysteresis over three frequency decades, a remanent polarization of ∼125 μC/cm2, a strongly frequency dependent coercive field, highly uniform dc leakage currents, and endurance >106 field cycles. This report validates possibilities for ferroelectric nitride integration into conventional III-nitride heterostructures with high crystalline fidelity, high electrical resistivity, and persistent hysteresis. Such materials are synthesizable at thermal budgets and temperatures compatible with back-end-of-the-line boundary conditions.

Original languageEnglish (US)
Article number142101
JournalApplied Physics Letters
Volume124
Issue number14
DOIs
StatePublished - Apr 1 2024

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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