Ferroelectric and magnetoelectric characteristics of the PZT thin films deposited on nickel

Reema Gupta; Monika Tomar; Vinay Gupta; Yuan Zhou; Amar Bhalla; Shashank Priya

doi:10.1166/asl.2014.5462

Ferroelectric and magnetoelectric characteristics of the PZT thin films deposited on nickel

Reema Gupta, Monika Tomar, Vinay Gupta, Yuan Zhou, Amar Bhalla, Shashank Priya

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Ferroelectric Pb (Zr_x Ti_1-x)O₃ (PZT) thin films were deposited on magnetostrictive nickel substrate and fused quartz using chemical solution deposition (CSD) technique. The remanent polarization and coercive field values were observed to be 50 µC/cm² and 125 kV/cm at an applied field of 35 V. The dependence of remanent polarization under magnetic field showed a significant modulation of charge 12 µC/cm² at 3.2 kOe for PZT film deposited on nickel. These results show great potential of implementing the PZT/Ni system for AC magnetic field sensors and dual phase energy harvesting devices. The PZT thin film on fused quartz substrate exhibited good transmittance (>85%) in the visible region and band gap of direct optical transition is found to be 4.1 eV.

Original language	English (US)
Pages (from-to)	1116-1119
Number of pages	4
Journal	Advanced Science Letters
Volume	20
Issue number	5-6
DOIs	https://doi.org/10.1166/asl.2014.5462
State	Published - May 1 2014

All Science Journal Classification (ASJC) codes

Computer Science(all)
Health(social science)
Mathematics(all)
Education
Environmental Science(all)
Engineering(all)
Energy(all)

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title = "Ferroelectric and magnetoelectric characteristics of the PZT thin films deposited on nickel",

abstract = "Ferroelectric Pb (Zrx Ti1-x)O3 (PZT) thin films were deposited on magnetostrictive nickel substrate and fused quartz using chemical solution deposition (CSD) technique. The remanent polarization and coercive field values were observed to be 50 µC/cm2 and 125 kV/cm at an applied field of 35 V. The dependence of remanent polarization under magnetic field showed a significant modulation of charge 12 µC/cm2 at 3.2 kOe for PZT film deposited on nickel. These results show great potential of implementing the PZT/Ni system for AC magnetic field sensors and dual phase energy harvesting devices. The PZT thin film on fused quartz substrate exhibited good transmittance (>85%) in the visible region and band gap of direct optical transition is found to be 4.1 eV.",

author = "Reema Gupta and Monika Tomar and Vinay Gupta and Yuan Zhou and Amar Bhalla and Shashank Priya",

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T1 - Ferroelectric and magnetoelectric characteristics of the PZT thin films deposited on nickel

AU - Gupta, Reema

AU - Tomar, Monika

AU - Gupta, Vinay

AU - Zhou, Yuan

AU - Bhalla, Amar

AU - Priya, Shashank

PY - 2014/5/1

Y1 - 2014/5/1

N2 - Ferroelectric Pb (Zrx Ti1-x)O3 (PZT) thin films were deposited on magnetostrictive nickel substrate and fused quartz using chemical solution deposition (CSD) technique. The remanent polarization and coercive field values were observed to be 50 µC/cm2 and 125 kV/cm at an applied field of 35 V. The dependence of remanent polarization under magnetic field showed a significant modulation of charge 12 µC/cm2 at 3.2 kOe for PZT film deposited on nickel. These results show great potential of implementing the PZT/Ni system for AC magnetic field sensors and dual phase energy harvesting devices. The PZT thin film on fused quartz substrate exhibited good transmittance (>85%) in the visible region and band gap of direct optical transition is found to be 4.1 eV.

AB - Ferroelectric Pb (Zrx Ti1-x)O3 (PZT) thin films were deposited on magnetostrictive nickel substrate and fused quartz using chemical solution deposition (CSD) technique. The remanent polarization and coercive field values were observed to be 50 µC/cm2 and 125 kV/cm at an applied field of 35 V. The dependence of remanent polarization under magnetic field showed a significant modulation of charge 12 µC/cm2 at 3.2 kOe for PZT film deposited on nickel. These results show great potential of implementing the PZT/Ni system for AC magnetic field sensors and dual phase energy harvesting devices. The PZT thin film on fused quartz substrate exhibited good transmittance (>85%) in the visible region and band gap of direct optical transition is found to be 4.1 eV.

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JO - Advanced Science Letters

JF - Advanced Science Letters

IS - 5-6

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Ferroelectric and magnetoelectric characteristics of the PZT thin films deposited on nickel

Abstract

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