Abstract
Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (Pup) leads to charge depletion and consequently low conduction. Switching the polarization direction (Pdown) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3357-3364 |
| Number of pages | 8 |
| Journal | Advanced Materials |
| Volume | 25 |
| Issue number | 24 |
| DOIs | |
| State | Published - Jun 25 2013 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering