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Ferroelectric Domain Wall Memristor
James P.V. McConville
, Haidong Lu
, Bo Wang
, Yueze Tan
, Charlotte Cochard
, Michele Conroy
, Kalani Moore
, Alan Harvey
, Ursel Bangert
,
Long Qing Chen
, Alexei Gruverman
, J. Marty Gregg
Materials Science and Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
120
Scopus citations
Overview
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Keyphrases
Ferroelectric Domain Walls
100%
Domain Walls
100%
Memristor
100%
Resistivity
25%
Order of Magnitude
25%
Capacitor Structure
25%
Capacitors
25%
Applied Electric Field
25%
Resistance to Change
25%
Polarization Reversal
25%
Ferroelectric Layer
25%
Voltage Pulse
25%
Current Flow
25%
Coercive Voltage
25%
Conductive Domain Walls
25%
Conductance States
25%
Electric Field Pulse
25%
Domain Wall Density
25%
Artificial Synapses
25%
Neuromorphic System
25%
Physics
Memristor
100%
Domain Wall
100%
Ferroelectric Material
100%
Thin Films
12%
Electric Field
12%
Synapse
12%
Material Science
Ferroelectric Material
100%
Domain Wall
100%
Density
25%
Capacitor
25%
Electronic Circuit
12%
Thin Films
12%
Electrical Resistivity
12%
Lithium Niobate
12%