Ferroelectric properties of neodymium-doped Bi4Ti 3Oi12 thin films crystallized in different environments

Fang Hou; Mingrong Shen; Wenwu Cao

doi:10.1016/j.tsf.2004.03.030

Ferroelectric properties of neodymium-doped Bi₄Ti ₃Oi₁₂ thin films crystallized in different environments

Fang Hou, Mingrong Shen, Wenwu Cao

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Neodymium (Nd)-doped Bi₄Ti₃O₁₂ (Bi _3.15Nd_0.85Ti₃O₁₂, BNT) ferroelectric films have been deposited on Pt/Ti/SiO₂/Si substrates by a sol-gel process and crystallized in nitrogen, air and oxygen environments, respectively. The crystallization environment was found to be important in determining the crystallization and ferroelectric properties of the BNT films. The film crystallized in nitrogen at a relatively low temperature of 650°C, and exhibits excellent crystallinity and ferroelectricity with a remanent polarization of 2P_r = 63.6 μC/cm², a coercive field of 130 kV/cm and a fatigue-free characteristic. While the films annealed in air and oxygen, they did not show good crystallinity and ferroelectricity until they were annealed at 710 and 730°C, respectively. A correlation between the remanent polarization and dielectric constants of the BNT films has been observed.

Original language	English (US)
Pages (from-to)	35-39
Number of pages	5
Journal	Thin Solid Films
Volume	471
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2004.03.030
State	Published - Jan 3 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2004.03.030

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@article{b11e0668bfb44286b362b0895e6b920d,

title = "Ferroelectric properties of neodymium-doped Bi4Ti 3Oi12 thin films crystallized in different environments",

abstract = "Neodymium (Nd)-doped Bi4Ti3O12 (Bi 3.15Nd0.85Ti3O12, BNT) ferroelectric films have been deposited on Pt/Ti/SiO2/Si substrates by a sol-gel process and crystallized in nitrogen, air and oxygen environments, respectively. The crystallization environment was found to be important in determining the crystallization and ferroelectric properties of the BNT films. The film crystallized in nitrogen at a relatively low temperature of 650°C, and exhibits excellent crystallinity and ferroelectricity with a remanent polarization of 2Pr = 63.6 μC/cm2, a coercive field of 130 kV/cm and a fatigue-free characteristic. While the films annealed in air and oxygen, they did not show good crystallinity and ferroelectricity until they were annealed at 710 and 730°C, respectively. A correlation between the remanent polarization and dielectric constants of the BNT films has been observed.",

author = "Fang Hou and Mingrong Shen and Wenwu Cao",

note = "Funding Information: This research was sponsored by Natural Science Foundation of China (Grant No. 10204016) and by the NSF China and RGC Hong Kong Joint Research Scheme (Project No. N_CityU114/01).",

year = "2005",

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doi = "10.1016/j.tsf.2004.03.030",

language = "English (US)",

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journal = "Thin Solid Films",

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T1 - Ferroelectric properties of neodymium-doped Bi4Ti 3Oi12 thin films crystallized in different environments

AU - Hou, Fang

AU - Shen, Mingrong

AU - Cao, Wenwu

N1 - Funding Information: This research was sponsored by Natural Science Foundation of China (Grant No. 10204016) and by the NSF China and RGC Hong Kong Joint Research Scheme (Project No. N_CityU114/01).

PY - 2005/1/3

Y1 - 2005/1/3

N2 - Neodymium (Nd)-doped Bi4Ti3O12 (Bi 3.15Nd0.85Ti3O12, BNT) ferroelectric films have been deposited on Pt/Ti/SiO2/Si substrates by a sol-gel process and crystallized in nitrogen, air and oxygen environments, respectively. The crystallization environment was found to be important in determining the crystallization and ferroelectric properties of the BNT films. The film crystallized in nitrogen at a relatively low temperature of 650°C, and exhibits excellent crystallinity and ferroelectricity with a remanent polarization of 2Pr = 63.6 μC/cm2, a coercive field of 130 kV/cm and a fatigue-free characteristic. While the films annealed in air and oxygen, they did not show good crystallinity and ferroelectricity until they were annealed at 710 and 730°C, respectively. A correlation between the remanent polarization and dielectric constants of the BNT films has been observed.

AB - Neodymium (Nd)-doped Bi4Ti3O12 (Bi 3.15Nd0.85Ti3O12, BNT) ferroelectric films have been deposited on Pt/Ti/SiO2/Si substrates by a sol-gel process and crystallized in nitrogen, air and oxygen environments, respectively. The crystallization environment was found to be important in determining the crystallization and ferroelectric properties of the BNT films. The film crystallized in nitrogen at a relatively low temperature of 650°C, and exhibits excellent crystallinity and ferroelectricity with a remanent polarization of 2Pr = 63.6 μC/cm2, a coercive field of 130 kV/cm and a fatigue-free characteristic. While the films annealed in air and oxygen, they did not show good crystallinity and ferroelectricity until they were annealed at 710 and 730°C, respectively. A correlation between the remanent polarization and dielectric constants of the BNT films has been observed.

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IS - 1-2

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Ferroelectric properties of neodymium-doped Bi₄Ti ₃Oi₁₂ thin films crystallized in different environments

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