Ferroelectric properties of SBT (Sr/Bi/Ta = 0.8/2.3/2) thin films using a novel chemical solution deposition

Seung Hyun Kim; D. J. Kim; S. K. Streiffer; J. P. Maria; Angus I. Kingon

Ferroelectric properties of SBT (Sr/Bi/Ta = 0.8/2.3/2) thin films using a novel chemical solution deposition

Seung Hyun Kim, D. J. Kim, S. K. Streiffer, J. P. Maria, Angus I. Kingon

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

A new chemical route using an alkanolamine chelating agent for synthesis of ferroelectric Sr_0.8Bi_2.3Ta₂O₉ (SBT) thin films is investigated. The addition of alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. This solution could be stored for 30 days without any appreciable change of the properties. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature, and strongly influenced the ferroelectric properties. This alkanolamine modified films annealed at 800°C exhibited low voltage saturation, high remanent polarization and resistance to fatigue after 10¹⁰ switching cycles. These electrical properties are favorable for non-volatile memory applications.

Original language	English (US)
Pages (from-to)	223-228
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	541
State	Published - 1999
Event	Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: Nov 30 1998 → Dec 3 1998

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{37b566b2b0434f759bfc98b770444b46,

title = "Ferroelectric properties of SBT (Sr/Bi/Ta = 0.8/2.3/2) thin films using a novel chemical solution deposition",

abstract = "A new chemical route using an alkanolamine chelating agent for synthesis of ferroelectric Sr0.8Bi2.3Ta2O9 (SBT) thin films is investigated. The addition of alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. This solution could be stored for 30 days without any appreciable change of the properties. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature, and strongly influenced the ferroelectric properties. This alkanolamine modified films annealed at 800°C exhibited low voltage saturation, high remanent polarization and resistance to fatigue after 1010 switching cycles. These electrical properties are favorable for non-volatile memory applications.",

author = "Kim, {Seung Hyun} and Kim, {D. J.} and Streiffer, {S. K.} and Maria, {J. P.} and Kingon, {Angus I.}",

year = "1999",

language = "English (US)",

volume = "541",

pages = "223--228",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' ; Conference date: 30-11-1998 Through 03-12-1998",

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TY - JOUR

T1 - Ferroelectric properties of SBT (Sr/Bi/Ta = 0.8/2.3/2) thin films using a novel chemical solution deposition

AU - Kim, Seung Hyun

AU - Kim, D. J.

AU - Streiffer, S. K.

AU - Maria, J. P.

AU - Kingon, Angus I.

PY - 1999

Y1 - 1999

N2 - A new chemical route using an alkanolamine chelating agent for synthesis of ferroelectric Sr0.8Bi2.3Ta2O9 (SBT) thin films is investigated. The addition of alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. This solution could be stored for 30 days without any appreciable change of the properties. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature, and strongly influenced the ferroelectric properties. This alkanolamine modified films annealed at 800°C exhibited low voltage saturation, high remanent polarization and resistance to fatigue after 1010 switching cycles. These electrical properties are favorable for non-volatile memory applications.

AB - A new chemical route using an alkanolamine chelating agent for synthesis of ferroelectric Sr0.8Bi2.3Ta2O9 (SBT) thin films is investigated. The addition of alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. This solution could be stored for 30 days without any appreciable change of the properties. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature, and strongly influenced the ferroelectric properties. This alkanolamine modified films annealed at 800°C exhibited low voltage saturation, high remanent polarization and resistance to fatigue after 1010 switching cycles. These electrical properties are favorable for non-volatile memory applications.

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M3 - Conference article

AN - SCOPUS:0032592349

SN - 0272-9172

VL - 541

SP - 223

EP - 228

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'

Y2 - 30 November 1998 through 3 December 1998

ER -

Ferroelectric properties of SBT (Sr/Bi/Ta = 0.8/2.3/2) thin films using a novel chemical solution deposition

Abstract

All Science Journal Classification (ASJC) codes

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