TY - GEN
T1 - Ferroelectric PTCR films for photonic crystal gas sensor
AU - RaviPrakash, J.
AU - Trolier-McKinstry, Susan
AU - Cheng, Jing Gong
AU - McNeal, Mark
AU - Greenwald, Anton
AU - Puscasu, Irina
AU - Johnson, Edward
AU - Pralle, Martin
AU - Shah, Ashak
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2006
Y1 - 2006
N2 - We examined lanthanum doped lead barium titanate films for temperature measurements of photonic crystal - MEMS devices. Films were deposited by sol-gel techniques and crystallized in air above 650°C X-ray diffraction spectra consistent with the perovskite structure were detected. The room temperature dielectric constant was ∼570 at 10 kHz of La-doped (0.3 mol%) Pb 0.3Ba0.7TiO3 films. These films had a remanent polarization of ∼20μC/cm2 and a coercive field of 145 kV/cm. The leakage current density was ∼ 2×10-7 amps/cm 2 at 100 kV/cm field. The resistivity of the films extracted from the linear region of the I-V data (electric fields in excess of 100 kV/cm) measured as a function of temperature shows an increase in resistivity at temperatures above Tc (120°C for BaTiO3 and 240°C for Pb 0.3Ba0.7TiO3) of the film consistent with positive coefficient of resistance (PTCR) effect. However, the change in resistance was small when compared to bulk samples of similar compositions.
AB - We examined lanthanum doped lead barium titanate films for temperature measurements of photonic crystal - MEMS devices. Films were deposited by sol-gel techniques and crystallized in air above 650°C X-ray diffraction spectra consistent with the perovskite structure were detected. The room temperature dielectric constant was ∼570 at 10 kHz of La-doped (0.3 mol%) Pb 0.3Ba0.7TiO3 films. These films had a remanent polarization of ∼20μC/cm2 and a coercive field of 145 kV/cm. The leakage current density was ∼ 2×10-7 amps/cm 2 at 100 kV/cm field. The resistivity of the films extracted from the linear region of the I-V data (electric fields in excess of 100 kV/cm) measured as a function of temperature shows an increase in resistivity at temperatures above Tc (120°C for BaTiO3 and 240°C for Pb 0.3Ba0.7TiO3) of the film consistent with positive coefficient of resistance (PTCR) effect. However, the change in resistance was small when compared to bulk samples of similar compositions.
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U2 - 10.1557/proc-0952-f10-08
DO - 10.1557/proc-0952-f10-08
M3 - Conference contribution
AN - SCOPUS:40949160261
SN - 9781604234084
T3 - Materials Research Society Symposium Proceedings
SP - 54
EP - 59
BT - Integrated Nanosensors
PB - Materials Research Society
T2 - 2006 MRS Fall Meeting
Y2 - 27 November 2006 through 1 December 2006
ER -