Ferroelectric PTCR films for photonic crystal gas sensor

J. RaviPrakash, Susan Trolier-McKinstry, Jing Gong Cheng, Mark McNeal, Anton Greenwald, Irina Puscasu, Edward Johnson, Martin Pralle, Ashak Shah

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We examined lanthanum doped lead barium titanate films for temperature measurements of photonic crystal - MEMS devices. Films were deposited by sol-gel techniques and crystallized in air above 650°C X-ray diffraction spectra consistent with the perovskite structure were detected. The room temperature dielectric constant was ∼570 at 10 kHz of La-doped (0.3 mol%) Pb 0.3Ba0.7TiO3 films. These films had a remanent polarization of ∼20μC/cm2 and a coercive field of 145 kV/cm. The leakage current density was ∼ 2×10-7 amps/cm 2 at 100 kV/cm field. The resistivity of the films extracted from the linear region of the I-V data (electric fields in excess of 100 kV/cm) measured as a function of temperature shows an increase in resistivity at temperatures above Tc (120°C for BaTiO3 and 240°C for Pb 0.3Ba0.7TiO3) of the film consistent with positive coefficient of resistance (PTCR) effect. However, the change in resistance was small when compared to bulk samples of similar compositions.

Original languageEnglish (US)
Title of host publicationIntegrated Nanosensors
PublisherMaterials Research Society
Pages54-59
Number of pages6
ISBN (Print)9781604234084
DOIs
StatePublished - 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume952
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA
Period11/27/0612/1/06

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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