Ferroelectric PTCR films for photonic crystal gas sensor

J. RaviPrakash; Susan Trolier-McKinstry; Jing Gong Cheng; Mark McNeal; Anton Greenwald; Irina Puscasu; Edward Johnson; Martin Pralle; Ashak Shah

doi:10.1557/proc-0952-f10-08

Ferroelectric PTCR films for photonic crystal gas sensor

J. RaviPrakash
, Susan Trolier-McKinstry
, Jing Gong Cheng
, Mark McNeal
, Anton Greenwald
, Irina Puscasu
, Edward Johnson
, Martin Pralle
, Ashak Shah

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We examined lanthanum doped lead barium titanate films for temperature measurements of photonic crystal - MEMS devices. Films were deposited by sol-gel techniques and crystallized in air above 650°C X-ray diffraction spectra consistent with the perovskite structure were detected. The room temperature dielectric constant was ∼570 at 10 kHz of La-doped (0.3 mol%) Pb _0.3Ba_0.7TiO₃ films. These films had a remanent polarization of ∼20μC/cm² and a coercive field of 145 kV/cm. The leakage current density was ∼ 2×10^-7 amps/cm ² at 100 kV/cm field. The resistivity of the films extracted from the linear region of the I-V data (electric fields in excess of 100 kV/cm) measured as a function of temperature shows an increase in resistivity at temperatures above Tc (120°C for BaTiO₃ and 240°C for Pb _0.3Ba_0.7TiO₃) of the film consistent with positive coefficient of resistance (PTCR) effect. However, the change in resistance was small when compared to bulk samples of similar compositions.

Original language	English (US)
Title of host publication	Integrated Nanosensors
Publisher	Materials Research Society
Pages	54-59
Number of pages	6
ISBN (Print)	9781604234084
DOIs	https://doi.org/10.1557/proc-0952-f10-08
State	Published - 2006
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: Nov 27 2006 → Dec 1 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	952
ISSN (Print)	0272-9172

Other

Other	2006 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/27/06 → 12/1/06

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-0952-f10-08

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@inproceedings{3b578f28a9d14b62adb20e16ca2065b9,

title = "Ferroelectric PTCR films for photonic crystal gas sensor",

abstract = "We examined lanthanum doped lead barium titanate films for temperature measurements of photonic crystal - MEMS devices. Films were deposited by sol-gel techniques and crystallized in air above 650°C X-ray diffraction spectra consistent with the perovskite structure were detected. The room temperature dielectric constant was ∼570 at 10 kHz of La-doped (0.3 mol\%) Pb 0.3Ba0.7TiO3 films. These films had a remanent polarization of ∼20μC/cm2 and a coercive field of 145 kV/cm. The leakage current density was ∼ 2×10-7 amps/cm 2 at 100 kV/cm field. The resistivity of the films extracted from the linear region of the I-V data (electric fields in excess of 100 kV/cm) measured as a function of temperature shows an increase in resistivity at temperatures above Tc (120°C for BaTiO3 and 240°C for Pb 0.3Ba0.7TiO3) of the film consistent with positive coefficient of resistance (PTCR) effect. However, the change in resistance was small when compared to bulk samples of similar compositions.",

author = "J. RaviPrakash and Susan Trolier-McKinstry and Cheng, \{Jing Gong\} and Mark McNeal and Anton Greenwald and Irina Puscasu and Edward Johnson and Martin Pralle and Ashak Shah",

year = "2006",

doi = "10.1557/proc-0952-f10-08",

language = "English (US)",

isbn = "9781604234084",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "54--59",

booktitle = "Integrated Nanosensors",

address = "United States",

}

RaviPrakash, J, Trolier-McKinstry, S, Cheng, JG, McNeal, M, Greenwald, A, Puscasu, I, Johnson, E, Pralle, M & Shah, A 2006, Ferroelectric PTCR films for photonic crystal gas sensor. in Integrated Nanosensors. Materials Research Society Symposium Proceedings, vol. 952, Materials Research Society, pp. 54-59, 2006 MRS Fall Meeting, Boston, MA, United States, 11/27/06. https://doi.org/10.1557/proc-0952-f10-08

TY - GEN

T1 - Ferroelectric PTCR films for photonic crystal gas sensor

AU - RaviPrakash, J.

AU - Trolier-McKinstry, Susan

AU - Cheng, Jing Gong

AU - McNeal, Mark

AU - Greenwald, Anton

AU - Puscasu, Irina

AU - Johnson, Edward

AU - Pralle, Martin

AU - Shah, Ashak

PY - 2006

Y1 - 2006

N2 - We examined lanthanum doped lead barium titanate films for temperature measurements of photonic crystal - MEMS devices. Films were deposited by sol-gel techniques and crystallized in air above 650°C X-ray diffraction spectra consistent with the perovskite structure were detected. The room temperature dielectric constant was ∼570 at 10 kHz of La-doped (0.3 mol%) Pb 0.3Ba0.7TiO3 films. These films had a remanent polarization of ∼20μC/cm2 and a coercive field of 145 kV/cm. The leakage current density was ∼ 2×10-7 amps/cm 2 at 100 kV/cm field. The resistivity of the films extracted from the linear region of the I-V data (electric fields in excess of 100 kV/cm) measured as a function of temperature shows an increase in resistivity at temperatures above Tc (120°C for BaTiO3 and 240°C for Pb 0.3Ba0.7TiO3) of the film consistent with positive coefficient of resistance (PTCR) effect. However, the change in resistance was small when compared to bulk samples of similar compositions.

AB - We examined lanthanum doped lead barium titanate films for temperature measurements of photonic crystal - MEMS devices. Films were deposited by sol-gel techniques and crystallized in air above 650°C X-ray diffraction spectra consistent with the perovskite structure were detected. The room temperature dielectric constant was ∼570 at 10 kHz of La-doped (0.3 mol%) Pb 0.3Ba0.7TiO3 films. These films had a remanent polarization of ∼20μC/cm2 and a coercive field of 145 kV/cm. The leakage current density was ∼ 2×10-7 amps/cm 2 at 100 kV/cm field. The resistivity of the films extracted from the linear region of the I-V data (electric fields in excess of 100 kV/cm) measured as a function of temperature shows an increase in resistivity at temperatures above Tc (120°C for BaTiO3 and 240°C for Pb 0.3Ba0.7TiO3) of the film consistent with positive coefficient of resistance (PTCR) effect. However, the change in resistance was small when compared to bulk samples of similar compositions.

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U2 - 10.1557/proc-0952-f10-08

DO - 10.1557/proc-0952-f10-08

M3 - Conference contribution

AN - SCOPUS:40949160261

SN - 9781604234084

T3 - Materials Research Society Symposium Proceedings

SP - 54

EP - 59

BT - Integrated Nanosensors

PB - Materials Research Society

T2 - 2006 MRS Fall Meeting

Y2 - 27 November 2006 through 1 December 2006

ER -

Ferroelectric PTCR films for photonic crystal gas sensor

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