Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films

Dixiong Wang, Jeffrey Zheng, Pariasadat Musavigharavi, Wanlin Zhu, Alexandre C. Foucher, Susan E. Trolier-Mckinstry, Eric A. Stach, Roy H. Olsson

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58 Scopus citations


Ferroelectric switching was studied in 20 nm thick Al0.68Sc0.32N and Al0.64Sc0.36N films (with 4 nm surface oxides) on platinized silicon wafers by multiple electrical characterization methods. Positive up negative down (PUND) measurements were conducted using 100 \mu s monopolar triangular waveform excitation. At room temperature, Al0.68Sc0.32N exhibited an apparent remanent polarization, P r}} = {140}\,\,\mu C /cm2 and a coercive field, E c}} = {6.5 MV/cm, while film leakage prevented quantitative measurement of the Al0.64Sc0.36N ferroelectric properties. Remanent polarizations of 75~\mu C /cm2 for Al0.68Sc0.32N and 25\mu C /cm2for Al0.64Sc0.36N were measured at 120 K. Partial ferroelectric switching was confirmed at room temperature for both materials via the measured transverse piezoelectric coefficients (e31, f) of -1.3 C/m2 (down-switching) and -0.3 C/m2 (up-switching) for Al0.68Sc0.32N, and -0.9 C/m2 (down-switching) and -0.7 C/m2 (up-switching) for Al0.64Sc0.36N.

Original languageEnglish (US)
Article number9241842
Pages (from-to)1774-1777
Number of pages4
JournalIEEE Electron Device Letters
Issue number12
StatePublished - Dec 2020

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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