TY - JOUR
T1 - Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films
AU - Wang, Dixiong
AU - Zheng, Jeffrey
AU - Musavigharavi, Pariasadat
AU - Zhu, Wanlin
AU - Foucher, Alexandre C.
AU - Trolier-Mckinstry, Susan E.
AU - Stach, Eric A.
AU - Olsson, Roy H.
N1 - Funding Information:
Manuscript received October 6, 2020; revised October 24, 2020; accepted October 26, 2020. Date of publication October 28, 2020; date of current version November 24, 2020. This work was supported in part by Semiconductor Research Corporation (SRC), and in part by the Defense Advanced Research Projects Agency (DARPA), Tunable Ferroelectric Nitrides (TUFEN) Program under Grant HR00112090046 and Grant HR00112090047. This work was carried out in part at the Singh Center for Nanotechnology, which is supported by the NSF National Nanotechnology Coordinated Infrastructure Program under Grant NNCI-1542153. The authors gratefully acknowledge use of facilities and instrumentation supported by the NSF through the University of Pennsylvania Materials Research Science and Engineering Center (MRSEC) under Grant DMR-1720530. The review of this letter was arranged by Editor U. Schroeder. (Corresponding author: Dixiong Wang.) Dixiong Wang, Pariasadat Musavigharavi, and Roy H. Olsson III are with the Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104 USA (e-mail: dixiongw@ seas.upenn.edu).
Publisher Copyright:
© 1980-2012 IEEE.
PY - 2020/12
Y1 - 2020/12
N2 - Ferroelectric switching was studied in 20 nm thick Al0.68Sc0.32N and Al0.64Sc0.36N films (with 4 nm surface oxides) on platinized silicon wafers by multiple electrical characterization methods. Positive up negative down (PUND) measurements were conducted using 100 \mu s monopolar triangular waveform excitation. At room temperature, Al0.68Sc0.32N exhibited an apparent remanent polarization, P r}} = {140}\,\,\mu C /cm2 and a coercive field, E c}} = {6.5 MV/cm, while film leakage prevented quantitative measurement of the Al0.64Sc0.36N ferroelectric properties. Remanent polarizations of 75~\mu C /cm2 for Al0.68Sc0.32N and 25\mu C /cm2for Al0.64Sc0.36N were measured at 120 K. Partial ferroelectric switching was confirmed at room temperature for both materials via the measured transverse piezoelectric coefficients (e31, f) of -1.3 C/m2 (down-switching) and -0.3 C/m2 (up-switching) for Al0.68Sc0.32N, and -0.9 C/m2 (down-switching) and -0.7 C/m2 (up-switching) for Al0.64Sc0.36N.
AB - Ferroelectric switching was studied in 20 nm thick Al0.68Sc0.32N and Al0.64Sc0.36N films (with 4 nm surface oxides) on platinized silicon wafers by multiple electrical characterization methods. Positive up negative down (PUND) measurements were conducted using 100 \mu s monopolar triangular waveform excitation. At room temperature, Al0.68Sc0.32N exhibited an apparent remanent polarization, P r}} = {140}\,\,\mu C /cm2 and a coercive field, E c}} = {6.5 MV/cm, while film leakage prevented quantitative measurement of the Al0.64Sc0.36N ferroelectric properties. Remanent polarizations of 75~\mu C /cm2 for Al0.68Sc0.32N and 25\mu C /cm2for Al0.64Sc0.36N were measured at 120 K. Partial ferroelectric switching was confirmed at room temperature for both materials via the measured transverse piezoelectric coefficients (e31, f) of -1.3 C/m2 (down-switching) and -0.3 C/m2 (up-switching) for Al0.68Sc0.32N, and -0.9 C/m2 (down-switching) and -0.7 C/m2 (up-switching) for Al0.64Sc0.36N.
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U2 - 10.1109/LED.2020.3034576
DO - 10.1109/LED.2020.3034576
M3 - Article
AN - SCOPUS:85097339430
SN - 0741-3106
VL - 41
SP - 1774
EP - 1777
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 12
M1 - 9241842
ER -