Ferroelectrics: The strain limits on switching

Wenwu Cao

Research output: Contribution to journalShort surveypeer-review

55 Scopus citations


The crystal symmetry and related strains of ferroelectric materials strongly influence their switching behavior. Strain limitation on attainable polarization on ceramic ferroelectric thin films has been a technical hurdle for their application in memory devices. The first type of strain limitation on switching is provided by the transformation strain. The second type of strain restriction on switching occurs in ceramics, and is caused by intergranular interactions. The third type of strain restriction on switching occurs in ferroelectric thin films.

Original languageEnglish (US)
Pages (from-to)727-728
Number of pages2
JournalNature Materials
Issue number10
StatePublished - Oct 2005

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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