Ferroelectrics: The strain limits on switching

Wenwu Cao

doi:10.1038/nmat1506

Ferroelectrics: The strain limits on switching

Wenwu Cao

Research output: Contribution to journal › Short survey › peer-review

61 Scopus citations

Abstract

The crystal symmetry and related strains of ferroelectric materials strongly influence their switching behavior. Strain limitation on attainable polarization on ceramic ferroelectric thin films has been a technical hurdle for their application in memory devices. The first type of strain limitation on switching is provided by the transformation strain. The second type of strain restriction on switching occurs in ceramics, and is caused by intergranular interactions. The third type of strain restriction on switching occurs in ferroelectric thin films.

Original language	English (US)
Pages (from-to)	727-728
Number of pages	2
Journal	Nature Materials
Volume	4
Issue number	10
DOIs	https://doi.org/10.1038/nmat1506
State	Published - Oct 2005

All Science Journal Classification (ASJC) codes

General Chemistry
General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{443c6b77f9cf4d269d24ebc024b98daf,

title = "Ferroelectrics: The strain limits on switching",

abstract = "The crystal symmetry and related strains of ferroelectric materials strongly influence their switching behavior. Strain limitation on attainable polarization on ceramic ferroelectric thin films has been a technical hurdle for their application in memory devices. The first type of strain limitation on switching is provided by the transformation strain. The second type of strain restriction on switching occurs in ceramics, and is caused by intergranular interactions. The third type of strain restriction on switching occurs in ferroelectric thin films.",

author = "Wenwu Cao",

year = "2005",

month = oct,

doi = "10.1038/nmat1506",

language = "English (US)",

volume = "4",

pages = "727--728",

journal = "Nature Materials",

issn = "1476-1122",

publisher = "Nature Publishing Group",

number = "10",

}

TY - JOUR

T1 - Ferroelectrics

T2 - The strain limits on switching

AU - Cao, Wenwu

PY - 2005/10

Y1 - 2005/10

N2 - The crystal symmetry and related strains of ferroelectric materials strongly influence their switching behavior. Strain limitation on attainable polarization on ceramic ferroelectric thin films has been a technical hurdle for their application in memory devices. The first type of strain limitation on switching is provided by the transformation strain. The second type of strain restriction on switching occurs in ceramics, and is caused by intergranular interactions. The third type of strain restriction on switching occurs in ferroelectric thin films.

AB - The crystal symmetry and related strains of ferroelectric materials strongly influence their switching behavior. Strain limitation on attainable polarization on ceramic ferroelectric thin films has been a technical hurdle for their application in memory devices. The first type of strain limitation on switching is provided by the transformation strain. The second type of strain restriction on switching occurs in ceramics, and is caused by intergranular interactions. The third type of strain restriction on switching occurs in ferroelectric thin films.

UR - https://www.scopus.com/pages/publications/25844432160

UR - https://www.scopus.com/inward/citedby.url?scp=25844432160&partnerID=8YFLogxK

U2 - 10.1038/nmat1506

DO - 10.1038/nmat1506

M3 - Short survey

C2 - 16195763

AN - SCOPUS:25844432160

SN - 1476-1122

VL - 4

SP - 727

EP - 728

JO - Nature Materials

JF - Nature Materials

IS - 10

ER -

Ferroelectrics: The strain limits on switching

Abstract

All Science Journal Classification (ASJC) codes

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