Ferromagnetic semicondutors: Battle of the bands

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Abstract

Studies conducted by Dobrowolska et al. in the field of accurate and extensive measurements of the compositional dependence of the Curie temperature has solved various questions of the origin of ferromagnetism in the model ferromagnetic semiconductor (Ga,Mn)As. Dobrowolska et al. directly determined both the magnetically active (effective) Mn concentration and the hole concentration in one fell swoop through a combination of sophisticated materials characterization techniques. The mean-field Zener model uses a model Hamiltonian to argue that ferromagnetism is mediated by extended hole states with the Fermi energy located in the valence band. The location of the Fermi level within the impurity band show that the states in the center of the impurity band are extended whereas those towards the top or bottom of the band are more localized.

Original languageEnglish (US)
Pages (from-to)360-361
Number of pages2
JournalNature Materials
Volume11
Issue number5
DOIs
StatePublished - May 2012

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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