Ferromagnetism in Bi2Se3:Mn epitaxial layers

H. J. Von Bardeleben; J. L. Cantin; D. M. Zhang; A. Richardella; D. W. Rench; N. Samarth; J. A. Borchers

doi:10.1103/PhysRevB.88.075149

Ferromagnetism in Bi²Se³:Mn epitaxial layers

H. J. Von Bardeleben, J. L. Cantin, D. M. Zhang, A. Richardella, D. W. Rench, N. Samarth, J. A. Borchers

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32 Scopus citations

Abstract

The magnetism in ∼1 at% Mn-doped nanometric Bi²Se ³ epitaxial layers has been studied by ferromagnetic resonance (FMR), magnetometry, and polarized neutron reflectivity (PNR) measurements. The FMR results reveal the formation of an intrinsic homogeneous FM bulk phase, as confirmed by the PNR measurements. Its critical temperature is low: T _c ≈ 6 K; no surface magnetic phase is detected above this temperature. The FMR measurements at T = 4.2 K show a single uniform mode spectrum with a strong uniaxial in-plane/out-of-plane symmetry. The uniaxial anisotropy field at T = 4 K is H_a ∼ -2500 Oe, corresponding to a uniaxial anisotropy constant of -9 × 103 erg/cm3. The easy axis of magnetization is oriented in the film plane for temperatures between 4 K and T_c. Conduction electron-mediated FM in this (very) diluted magnetic semiconductor is considered as the most probable origin of the FM phase formation.

Original language	English (US)
Article number	075149
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	88
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.88.075149
State	Published - Aug 30 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.88.075149

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@article{e047b1a313284de9bcd99112fafc541a,

title = "Ferromagnetism in Bi2Se3:Mn epitaxial layers",

abstract = "The magnetism in ∼1 at\% Mn-doped nanometric Bi2Se 3 epitaxial layers has been studied by ferromagnetic resonance (FMR), magnetometry, and polarized neutron reflectivity (PNR) measurements. The FMR results reveal the formation of an intrinsic homogeneous FM bulk phase, as confirmed by the PNR measurements. Its critical temperature is low: T c ≈ 6 K; no surface magnetic phase is detected above this temperature. The FMR measurements at T = 4.2 K show a single uniform mode spectrum with a strong uniaxial in-plane/out-of-plane symmetry. The uniaxial anisotropy field at T = 4 K is Ha ∼ -2500 Oe, corresponding to a uniaxial anisotropy constant of -9 × 103 erg/cm3. The easy axis of magnetization is oriented in the film plane for temperatures between 4 K and Tc. Conduction electron-mediated FM in this (very) diluted magnetic semiconductor is considered as the most probable origin of the FM phase formation.",

author = "\{Von Bardeleben\}, \{H. J.\} and Cantin, \{J. L.\} and Zhang, \{D. M.\} and A. Richardella and Rench, \{D. W.\} and N. Samarth and Borchers, \{J. A.\}",

year = "2013",

month = aug,

day = "30",

doi = "10.1103/PhysRevB.88.075149",

language = "English (US)",

volume = "88",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "7",

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TY - JOUR

T1 - Ferromagnetism in Bi2Se3:Mn epitaxial layers

AU - Von Bardeleben, H. J.

AU - Cantin, J. L.

AU - Zhang, D. M.

AU - Richardella, A.

AU - Rench, D. W.

AU - Samarth, N.

AU - Borchers, J. A.

PY - 2013/8/30

Y1 - 2013/8/30

N2 - The magnetism in ∼1 at% Mn-doped nanometric Bi2Se 3 epitaxial layers has been studied by ferromagnetic resonance (FMR), magnetometry, and polarized neutron reflectivity (PNR) measurements. The FMR results reveal the formation of an intrinsic homogeneous FM bulk phase, as confirmed by the PNR measurements. Its critical temperature is low: T c ≈ 6 K; no surface magnetic phase is detected above this temperature. The FMR measurements at T = 4.2 K show a single uniform mode spectrum with a strong uniaxial in-plane/out-of-plane symmetry. The uniaxial anisotropy field at T = 4 K is Ha ∼ -2500 Oe, corresponding to a uniaxial anisotropy constant of -9 × 103 erg/cm3. The easy axis of magnetization is oriented in the film plane for temperatures between 4 K and Tc. Conduction electron-mediated FM in this (very) diluted magnetic semiconductor is considered as the most probable origin of the FM phase formation.

AB - The magnetism in ∼1 at% Mn-doped nanometric Bi2Se 3 epitaxial layers has been studied by ferromagnetic resonance (FMR), magnetometry, and polarized neutron reflectivity (PNR) measurements. The FMR results reveal the formation of an intrinsic homogeneous FM bulk phase, as confirmed by the PNR measurements. Its critical temperature is low: T c ≈ 6 K; no surface magnetic phase is detected above this temperature. The FMR measurements at T = 4.2 K show a single uniform mode spectrum with a strong uniaxial in-plane/out-of-plane symmetry. The uniaxial anisotropy field at T = 4 K is Ha ∼ -2500 Oe, corresponding to a uniaxial anisotropy constant of -9 × 103 erg/cm3. The easy axis of magnetization is oriented in the film plane for temperatures between 4 K and Tc. Conduction electron-mediated FM in this (very) diluted magnetic semiconductor is considered as the most probable origin of the FM phase formation.

UR - https://www.scopus.com/pages/publications/84884528283

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U2 - 10.1103/PhysRevB.88.075149

DO - 10.1103/PhysRevB.88.075149

M3 - Article

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VL - 88

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 7

M1 - 075149

ER -

Ferromagnetism in Bi²Se³:Mn epitaxial layers

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