FETRAM. An organic ferroelectric material based novel random access memory cell

Saptarshi Das, Joerg Appenzeller

Research output: Contribution to journalArticlepeer-review

85 Scopus citations


Science and technology in the electronics area have always been driven by the development of materials with unique properties and their integration into novel device concepts with the ultimate goal to enable new functionalities in innovative circuit architectures. In particular, a shift in paradigm requires a synergistic approach that combines materials, devices and circuit aspects simultaneously. Here we report the experimental implementation of a novel nonvolatile memory cell that combines silicon nanowires with an organic ferroelectric polymer-PVDF-TrFE-into a new ferroelectric transistor architecture. Our new cell, the ferroelectric transistor random access memory (FeTRAM) exhibits similarities with state-of-the-art ferroelectric random access memories (FeRAMs) in that it utilizes a ferroelectric material to store information in a nonvolatile (NV) fashion but with the added advantage of allowing for nondestructive readout. This nondestructive readout is a result of information being stored in our cell using a ferroelectric transistor instead of a capacitor-the scheme commonly employed in conventional FeRAMs.

Original languageEnglish (US)
Pages (from-to)4003-4007
Number of pages5
JournalNano letters
Issue number9
StatePublished - Sep 14 2011

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


Dive into the research topics of 'FETRAM. An organic ferroelectric material based novel random access memory cell'. Together they form a unique fingerprint.

Cite this