Field-effect modulation of anomalous Hall effect in diluted ferromagnetic topological insulator epitaxial films

Cui Zu Chang; Min Hao Liu; Zuo Cheng Zhang; Ya Yu Wang; Ke He; Qi Kun Xue

doi:10.1007/s11433-015-5761-9

Field-effect modulation of anomalous Hall effect in diluted ferromagnetic topological insulator epitaxial films

Cui Zu Chang, Min Hao Liu, Zuo Cheng Zhang, Ya Yu Wang, Ke He, Qi Kun Xue

Physics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

High quality chromium (Cr) doped three-dimensional topological insulator (TI) Sb₂Te₃ films are grown via molecular beam epitaxy on heat-treated insulating SrTiO₃ (111) substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb_2–xCr_xTe₃ films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors (DMSs), here the coercivity field is not significantly changed with decreasing carrier density. Carrier-independent ferromagnetism heralds Sb_2–xCr_xTe₃ films as the base candidate TI material to realize the quantum anomalous Hall (QAH) effect. These results also indicate the potential of controlling anomalous Hall voltage in future TI-based magneto-electronics and spintronics.

Original language	English (US)
Article number	637501
Pages (from-to)	1-5
Number of pages	5
Journal	Science China: Physics, Mechanics and Astronomy
Volume	59
Issue number	3
DOIs	https://doi.org/10.1007/s11433-015-5761-9
State	Published - Mar 1 2016

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1007/s11433-015-5761-9

Cite this

@article{bb94fe598a3f452b975abb5f2b9a5678,

title = "Field-effect modulation of anomalous Hall effect in diluted ferromagnetic topological insulator epitaxial films",

abstract = "High quality chromium (Cr) doped three-dimensional topological insulator (TI) Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3 (111) substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb2–xCrxTe3 films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors (DMSs), here the coercivity field is not significantly changed with decreasing carrier density. Carrier-independent ferromagnetism heralds Sb2–xCrxTe3 films as the base candidate TI material to realize the quantum anomalous Hall (QAH) effect. These results also indicate the potential of controlling anomalous Hall voltage in future TI-based magneto-electronics and spintronics.",

author = "Chang, {Cui Zu} and Liu, {Min Hao} and Zhang, {Zuo Cheng} and Wang, {Ya Yu} and Ke He and Xue, {Qi Kun}",

note = "Publisher Copyright: {\textcopyright} 2016, Science China Press and Springer-Verlag Berlin Heidelberg.",

year = "2016",

month = mar,

day = "1",

doi = "10.1007/s11433-015-5761-9",

language = "English (US)",

volume = "59",

pages = "1--5",

journal = "Science China: Physics, Mechanics and Astronomy",

issn = "1674-7348",

publisher = "Science China Press",

number = "3",

}

TY - JOUR

T1 - Field-effect modulation of anomalous Hall effect in diluted ferromagnetic topological insulator epitaxial films

AU - Chang, Cui Zu

AU - Liu, Min Hao

AU - Zhang, Zuo Cheng

AU - Wang, Ya Yu

AU - He, Ke

AU - Xue, Qi Kun

PY - 2016/3/1

Y1 - 2016/3/1

N2 - High quality chromium (Cr) doped three-dimensional topological insulator (TI) Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3 (111) substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb2–xCrxTe3 films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors (DMSs), here the coercivity field is not significantly changed with decreasing carrier density. Carrier-independent ferromagnetism heralds Sb2–xCrxTe3 films as the base candidate TI material to realize the quantum anomalous Hall (QAH) effect. These results also indicate the potential of controlling anomalous Hall voltage in future TI-based magneto-electronics and spintronics.

AB - High quality chromium (Cr) doped three-dimensional topological insulator (TI) Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3 (111) substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb2–xCrxTe3 films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors (DMSs), here the coercivity field is not significantly changed with decreasing carrier density. Carrier-independent ferromagnetism heralds Sb2–xCrxTe3 films as the base candidate TI material to realize the quantum anomalous Hall (QAH) effect. These results also indicate the potential of controlling anomalous Hall voltage in future TI-based magneto-electronics and spintronics.

UR - http://www.scopus.com/inward/record.url?scp=84955609929&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84955609929&partnerID=8YFLogxK

U2 - 10.1007/s11433-015-5761-9

DO - 10.1007/s11433-015-5761-9

M3 - Article

AN - SCOPUS:84955609929

SN - 1674-7348

VL - 59

SP - 1

EP - 5

JO - Science China: Physics, Mechanics and Astronomy

JF - Science China: Physics, Mechanics and Astronomy

IS - 3

M1 - 637501

ER -

Field-effect modulation of anomalous Hall effect in diluted ferromagnetic topological insulator epitaxial films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Cite this