Abstract
Our simulations predict that boron-nitride (BN) doping in carbon nanotubes can greatly improve the field emission properties of these systems. The intrinsic electric field associated with the polarity of the B-N bond enhances the emitted current density through a reduction of the work function at the tip. Using a combination of real-space and plane-wave ab initio methods, we show that this effect is present in both coaxial (BN@C) and linear (BN/C) nanotubular assemblies. While in the coaxial geometry the improvement amounts to a factor of five, the current, density is predicted to increase by up to two orders of magnitude in BN/C superlattices.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 181-186 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 739 |
| DOIs | |
| State | Published - 2002 |
| Event | Three-Dimensional Nanoengineered Assemblies - Boston, MA, United States Duration: Dec 1 2002 → Dec 5 2002 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering